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Guillaume Pailloncy
at IEMN
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Author
Publications (3)
Proceedings Article | 23 May 2005 Paper
High frequency noise of SOI MOSFETs: performances and limitations
Francois Danneville, Guillaume Pailloncy, Alexandre Siligaris, Benjamin Iniguez, Gilles Dambrine
Proceedings Volume 5844, (2005) https://doi.org/10.1117/12.609669
KEYWORDS: Field effect transistors, Roentgenium, Resistance, Oxides, Diffusion, Interference (communication), Advanced distributed simulations, Silicon, Capacitance, Instrument modeling
Proceedings Article | 25 May 2004 Paper
Noise modeling and performance in 0.15-um fully depleted SOI MOSFET
Guillaume Pailloncy, Benjamin Iniguez, Gilles Dambrine, Morin Dehan, Jean-Pierre Raskin, Hideaki Matsuhashi, Pierre Delatte, Francois Danneville
Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546669
KEYWORDS: Field effect transistors, Performance modeling, Diffusion, Instrument modeling, Resistance, Reflection, Interference (communication), Physics, Microwave radiation, Telecommunications
Proceedings Article | 12 May 2003 Paper
Impact of downscaling on high-frequency noise performance of bulk and SOI MOSFETs
Gilles Dambrine, C. Raynaud, M. Vanmackelberg, Francois Danneville, Guillaume Pailloncy, Sylvie Lepilliet, Jean Pierre Raskin
Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.497141
KEYWORDS: Field effect transistors, Microwave radiation, Resistance, Silicon, Capacitance, Transistors, Fourier transforms, Annealing, Semiconducting wafers, Molybdenum
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