In order to study the damage area and morphology of silicon-based APD under different power density and different action time laser irradiation, based on two-dimensional microscopic measurement technology, the damage area and morphology of silicon-based APD were measured with laser power density and action time. The change. The results show that the damage area gradually increases with the increase of laser power density; with the increase of power density, APD produces surface peeling, wrinkles, cracks, pits and other damage effects.
This paper studied semiconductor parameters for the thermal effect of laser to the others quadrants when the millisecond-pulsed laser interacted with one quadrant of the Si-based p-i-n QPD. The thermal model and intrinsic carrier model were built on the basis of the semiconductor physics and thermal conduction theory, and a 3-D simulation model was built by the method of finite element, using COMSOL Multi-physics simulation software. It was taken into consideration that when the carrier was mainly derived from impurity ionization, the intrinsic carrier concentration is lower than impurity concentration at least an order of magnitude, it means that the concentration of intrinsic carrier is no more than 5×1014cm-3, and Si-Based semiconductor detector limit working temperature is 520K. The concentration distribution of intrinsic carrier and temperature distribution of all quadrants of QPD were simulated, and got rules which they changed over time. The conclusion was gotten, the thermal-induced failure time of the other quadrants of QPD decreased with the increase of laser energy density under the same laser spot. The thermal-induced failure time of the others quadrants of QPD extended with the increase of the lengths from every quadrant to the point of peak energy when the laser energy density was same. This paper provided important data basis for further research on the study of the interaction between laser and silicon-based semiconductor detectors.
In this paper, the surface temperature rise and damage morphology of biased Si avalanche photodiodes (APDs) fabricated in external capacitor circuit irradiated by 1.0ms and 1.5ms pulse width laser are studied. The effects of external capacitance on surface temperature rise and damage morphology of APD irradiated by pulsed laser under different laser energy densities were compared and analyzed. Compared with the absence of external capacitance, the existence of external capacitance reduces the surface temperature of Si-APD and has a certain impact on the damage morphology. The results show that under the same external capacitance and laser energy density, the surface temperature rise of APD treated by 1.5ms pulsed laser is lower than that of 1.0ms pulsed laser, and the surface temperature rise of APD decreases with the decrease of external capacitance.The results show that the existence of external capacitance can further improve the laser damage resistance of Si-APD.
Si-based p-i-n Quadrant Photodiode Detector(QPD) has be1 en widely used in experimental, military and civilian fields for its spot position detection characteristics. In optoelectronic countermeasure technology, there are defects in the detector after Si-based p-i-n Quadrant Photodiode Detector irradiated with laser, and detectivity is affected, nonlinear changes of dark current and responsivity is produced. Responsivity is an important parameter of photodetector. In this paper, the experimental research of responsivity in the process of interaction between millisecond pulsed laser and Si-based p-i-n Quadrant Photodiode Detector is carried out. It is gotten that the relationship between responsivity with laser energy density and laser pulse width in the process of Si-based p-i-n Quadrant Photodiode Detector irradiated by 1064nm millisecond pulse laser. The result of this research establish the foundation to investigate electrical damage of Si-based p-i-n Quadrant Photodiode Detector interacting with millisecond pulsed laser.
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