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Isao Nishimura
Post Doctoral Fellow at Univ of Texas at Austin
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Publications (3)
Proceedings Article | 26 March 2008 Paper
High-index resist for 193-nm immersion lithography
Proceedings Volume 6923, 692305 (2008) https://doi.org/10.1117/12.772958
KEYWORDS: Refractive index, Absorbance, Polymers, Absorption, Chlorine, Immersion lithography, Sulfur, Chemistry, Water, Imaging spectroscopy
Proceedings Article | 26 March 2008 Paper
Non-chemically amplified resists for 193 nm lithography
Isao Nishimura, William Heath, Kazuya Matsumoto, Wei-Lun Jen, Saul Lee, Colin Neikirk, Tsutomu Shimokawa, Koji Ito, Koichi Fujiwara, C. Grant Willson
Proceedings Volume 6923, 69231C (2008) https://doi.org/10.1117/12.772646
KEYWORDS: Polymers, Diffusion, Line width roughness, Lithography, Optical lithography, Ultraviolet radiation, Semiconducting wafers, Chemically amplified resists, Polymer thin films, Polymethylmethacrylate
Proceedings Article | 4 May 2005 Paper
Comparison of single-, bi-, and tri-layer resist process
Isao Nishimura, Hiroyuki Ishii, Norihiko Sugie, Naka-atsu Yoshimura, Masato Tanaka, Hiromi Egawa, Keiji Konno, Makoto Sugiura, Hikaru Sugita, Junichi Takahashi, Tsutomu Shimokawa
Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598367
KEYWORDS: Etching, Photoresist processing, Line width roughness, Lithography, Reflectivity, Photoresist materials, Line edge roughness, Silicon, Photomasks, Surface roughness
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