Aluminum-free material has proved to be very promising for lasers of 800 - 1000 nm wavelength range. Up to now the most widely used growth method of GaInAsP quaternary alloys was Metal-Organic Chemical Vapor Deposition (MOCVD) technique. Gas Source Molecular Beam Epitaxy (GSMBE) is also able to produce high-quality Al-free material for optoelectronics. This paper aims to present the direct comparison of laser material quality grown by MOCVD and GSMBE. The easiness of composition control, flexibility of the deposition process and composition uniformity in GSMBE-grown material allowed us to further improve the performance of laser diodes operating at 800 nm wavelength range.
InGaAs/GaInAsP/GaInP ridge waveguide 980-nm laser diodes for pumping light into erbium doped fiber amplifiers are reviewed. These lasers have very good performance characteristics. They exhibit kink-free, single mode emission up to a power of 250 mW with a slope efficiency of 0.7 to 0.95 W/A, a thermally limited maximum power of 450 - 500 mW, and the threshold current density of about 150 A/cm2. They are relatively stable against temperature variations. A 100 mW power from a fiber-pigtail module has been demonstrated. The lasers withstand severe thermal roll-over tests without showing degradation effects. Preliminary lifetime tests indicate that their mean-time-to-failure may be very high if not limited by sudden failure, from several hundred thousand to one million hours.
We review state-of-the-art aluminum-free GaInP-GaInAsP-GaInAs laser diodes which emit at the wavelength of 980 nm. These lasers are intended for pumping light into erbium-doped optical fiber amplifiers. We discuss the preparing of the layer structure, using the gas-source molecular beam epitaxy growth method, the lasing characteristics, fiber coupling efficiency, and reliability issues.
This paper describes state-of-the-art aluminum-free 980-nm laser diodes which are intended for pumping erbium doped optical fiber amplifiers (EDFA's). There are three principal issues for these laser diodes to be considered for the EDFA applications: light output power, efficiency of coupling the power into a fiber, and reliability. It has been shown that the lasers can launch 400 mW in single transverse mode of operation into free space. A coupling efficiency of 53% and a fiber-coupled power of 58 mW have been demonstrated. Because the Al-free 980-nm lasers are new, their lifetimes have not yet been thoroughly studied. However, some tentative experiments indicate that extrapolated lifetimes may be several hundred thousand hours at reasonable power levels. Thermal roll-over tests prove that the lasers withstand high currents and temperatures without any sign of degradation.
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