Laser direct write lithography using near-i-line wavelength is a very fast, versatile, and cost-effective maskless technique for fabricating microstructures, especially for prototyping and low-volume production in many fields of application, e.g. microelectronics, photonics, optical devices, and mastering. However, the resolution of this method is limited and depends on the focal length of the write lens used, which means that it is necessary to find a tradeoff between write speed and resolution. In this paper, we will optimize the resolution of i-line direct write processes by applying resolution enhancement techniques, which are well known in stepper lithography. IMS Chips and Heidelberg Instruments collaborated on tuning both process and tool performance with the goal to improve structure density and resolution.
In this study, performance improvement of an i-line laser writer used in the manufacture of masks for photonic device applications was successfully achieved and demonstrated. This was accomplished by conducting a thorough investigation and analysis of key lithographic performance characteristics, enabling the identification of optimal exposure strategies. Subsequent process characterization and design calibration was then performed using software tools. To assess improvement, a side-by-side comparison of performance was made between two identical silicon nitride photonic devices: one fabricated by a mask made using the improved laser writer process, the other by a mask written using a variable shaped electron beam writer. These devices were compared for optical loss to assess mask performance. This study demonstrates that the improved laser writer process enables the production of masks capable of infrared silicon nitride photonic device manufacture. This presents an opportunity in reducing the mask manufacturing costs involved in the fabrication of photonic devices.
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