Prof. Jianming Lu Profile

Prof. Jianming Lu

at Peking Univ.

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Proceedings Article | 24 November 2023 Paper

Study on 760nm silicon nitride micro ring resonator filter

Zhuo Chen, Linhu Xue, Siyuan Liu, Huan Zhao, Qianling Liu, Jianming Lu, Chunrui Han

Proceedings Volume 12935, 129355B (2023) https://doi.org/10.1117/12.3008436

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We designed and fabricated a silicon nitride (Si₃N₄) micro ring resonator filter coupled with a straight waveguide grating coupler in the visible wavelength range. The key parameters of the micro ring resonators, including the waveguide crosssection size, bending radius, coupling spacing as well as the linewidth and period of the grating coupler, are optimized to obtain an resonant output in the range of 730~780nm. Then, Si3N4 micro-ring resonators with different parameters are patterned by electron beam lithography (EBL), inductively coupled plasma etching (ICP) and other processes. At last, the filtered light peaks and the free spectral range of the micro ring resonator are characterized, which are found to be tunable by varying the cross section of the waveguide and the radius of the ring. In addition, by replacing SiO₂ with Polyvinyl alcohol (PVA) resin as the upper cladding of the device, the flatness of the top surface of the device can be further improved with a simplified process. Our study lays a foundation for the heterogeneous integration of different materials with COMS compatible silicon nitride platform.

Proceedings Article | 13 December 2021 Paper

Multiscale fabrication of integrated photonic chips by electron beam lithography

Siyuan Liu, Zhuangzhuang Qu, Yuanyuan Fan, Yan Qi, Lujun Bai, Weihu Zhou, Jianming Lu, Yu Wang, Chunrui Han

Proceedings Volume 12073, 1207307 (2021) https://doi.org/10.1117/12.2604003

KEYWORDS: Electron beam lithography, Photonic integrated circuits, Waveguides, Fabrication, Optical alignment, Scanning electron microscopy, Silicon, Chromium, Photonic devices, Integrated photonics

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The readily accessible commercial electron beam lithography (EBL) has high-accuracy and mask-free characteristics which enable fast exploration of novel on-chip devices. However, current EBL technique would be challenging to solve the dilemma between high accuracy and large writing field. Here we report an effective recipe to fabricate such multiscale photonic devices. It is realized by improving the standard procedure of stitching small writing fields with alignment markers. The key is the small patterns stitching and exposure alignment process. We divide the large design structure into several small patterns and take pictures of their corresponding alignment markers by the EBL instrument itself with exactly the same parameters used in the subsequent e-beam exposure. As such, the exposure alignment errors caused by calibration procedures are completely eliminated. We precisely write the divided patterns to desired locations by their surrounding markers and finally achieve gapless and precise stitching within the whole photonic circuit. The protocol is demonstrated by a Mach-Zehnder Interferometer (MZI) structure on a 200nm thick Si₃N₄ chip, in which nano-scale grating coupler have been clearly developed. Compared with traditional EBL technique, the connection accuracy of a waveguide between adjacent writing fields has been significantly improved to be less than 10 nm even without a laser interferometric stage. Moreover, due to the stitching mechanism, the maximum chip size for exposure becomes limitless and could reach up to the entire wafer. Our technique greatly expands the fabrication size of EBL while maintaining its high resolution and opens more opportunities to the development of integrated photonic circuits.

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