Mr. Jisoo Oh Profile

Jisoo Oh

at Sungkyunkwan Univ

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Proceedings Article | 21 March 2017 Paper

Improvement of a block co-polymer (PS-b-PDMS) template etch profile using amorphous carbon layer

JiSoo Oh, Jong Sik Oh, DaIn Sung, SoonMin Yim, SeungWon Song, GeunYoung Yeom

Proceedings Volume 10149, 101490U (2017) https://doi.org/10.1117/12.2258147

KEYWORDS: Etching, Line edge roughness, Lithography, Critical dimension metrology, Plasma etching, Plasma, Optical lithography, Extreme ultraviolet lithography, Double patterning technology

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Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS-b-PDMS), which is used as an alternative patterning method for various deep nanoscale devices due to its high Flory-Huggins interaction parameter (χ), such as optical devices and transistors, replacing conventional photolithography. As an alternate or supplementary nextgeneration lithography technology to extreme ultraviolet lithography (EUVL), BCP lithography utilizing the DSA of BCP has been actively studied. However, the nanoscale BCP mask material is easily damaged by the plasma and has a very low etch selectivity over bottom semiconductor materials, because it is composed of polymeric materials even though it contains Si in PDMS. In this study, an amorphous carbon layer (ACL) was inserted as a hardmask material between BCP and materials to be patterned, and, by using O₂ plasmas, the characteristics of dry etching of ACL for high aspect ratio (HAR) using a 10 nm PDMS pattern were investigated. The results showed that, by using a PS-b-PDMS pattern with an aspect ratio of 0.3~0.9:1, a HAR PDMS/ACL double layer mask with an aspect ratio of ~10:1 could be fabricated. In addition, by the optimization of the plasma etch process, ACL masks with excellent sidewall roughness (SWR,1.35 nm) and sidewall angle (SWA, 87.9˚) could be fabricated.

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