High power near-UV LEDs, with wavelengths from 365nm to 410nm, were realized with an external
quantum efficiency from 12% to 45% for 365nm and 410nm, resp.
We show that the vertical LED design, coupled with the Silicon sub-mount package, gives very good
reliability that is suitable for many high power epoxy and polymer curing applications. UV LEDs are
proven to be a good replacement for high power mercury lamps currently used in the market.
GaN vertical LED on metal alloy substrate (VLEDMS) is a desirable technology suitable for solid state lighting
application from the viewpoint of reliability and lighting efficacy performance. A new top surface engineering technique
for efficient light extraction is employed to VLEDMS to improve power conversion efficiency further. Corrugated
pyramid shaped (CPS) surfaces are developed and formed on VLEDMS. By using such structure, VLEDMS exhibit a
great enhancement of around 20% in light output power, and a high efficiency of over 100 lumens per watt can also be
achieved by white LEDs. In the life test, the light output power of VLEDMS chips drop only by less than 10% within
3,000 hours, and the chips can also endure over 1000 cycles of thermal shocks without significant variations in electro-optical
performance. Therefore, the highly reliable and bright VLEDMS using CPS surface engineering technique is very
suitable for the solid-state lighting application.
Vertical GaN based Light Emitting Diodes on metal alloy substrate (VLEDMS) were realized and
characterized for solid state lighting application. An efficiency of more than 100 lumens/watt from a white
LED was achieved. And, an efficiency of more than 80 lumens/watt from a high efficiency and high power
green LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs,
thanks to the higher thermal conductivity of a copper alloy substrate. This increases their maximum
operating current and output power and makes them more suitable for solid-state lighting applications. In
addition, these VLEDMS exhibit many advantages over those on sapphire under extreme operation
conditions for general lighting application.
In this paper we describe GaN based Vertical Light Emitting diode on Metal Alloy Substrate (VLEDMS) as a disruptive technology to solve the heat dissipation and current-crowding effect for the power device operated at high current. We focus on reliability features of VLEDMS under various operation regimes required for solid state lighting (SSL) application.
GaN vertical LED on metal alloy substrate (VLEDMS) has been successfully realized for wavelength spectrum from near UV to green color. Owing to the vertical structure and highly heat-conductive metal alloy substrate, VLEDMS exhibits an ultra high brightness and excellent reliability suitable for solid state lighting (SSL) application. A brightness of 80Lm/W using 450 nm chip mixed with yellow phosphor was achieved by optimization of LED structure epitaxy, chip process and packaging. Using 405 nm chip with polychromatic phosphor a 50 Lm/W white light with color rendering index better than 90 was obtained. We also can get very good uniform correlated color temperature from package with VLEDMS chip.
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