Dr. Jun Yuan Profile

Dr. Jun Yuan

at MTRC

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 5 November 2020 Paper

Effects of composition-graded AlGaN/GaN/AlGaN electron blocking layer on photoelectric performance in InGaN laser diodes

Wenjie Wang, Mingle Liao, Jun Yuan, Siyuan Luo

Proceedings Volume 11564, 1156405 (2020) https://doi.org/10.1117/12.2579741

KEYWORDS: Semiconductor lasers, Indium gallium nitride, Quantum wells, Gallium nitride, Refractive index, Waveguides

Read Abstract +

Herein, the optical and electrical property improvements of the InGaN MQW laser diode with an emission wavelength around 410 n1m are theoretically investigated by tuning the composition of AlGaN/GaN/AlGaN EBL, which is achieved with the simulation software Crosslight. The simulation results show that, compared with the reference structure (p-Al_0.2Ga_0.8N EBL), composition-graded AlGaN/GaN/AlGaN EBL structure A can increase the electron concentration in the quantum well, and ultimately increase the laser power, in which the Al content of EBL decreased from 0.2 to 0.05 along the growth direction. On the one hand, the height of EBL itself does not decrease compared to reference structure. On the other hand, gradually decreasing the Al content can reduce the polarization effect of the overall EBL, further increase the barrier height of EBL to electrons, resulting in reduced leakage current from 14.5% to 4.8% and increased output power by 0.28 times. For structure B, the EBL Al content increases from 0.05 to 0.2 in the growth direction, the barrier height of the EBL is significantly reduced, and a large amount of electrons leak into the EBL and p-GaN regions, resulting in an increase in leakage current. Therefore, the efficiency is significantly reduced compared to the structure A. The AlGaN/GaN/AlGaN composite EBL with gradually decreasing Al composition is an effective method to increase output power and suppress electron leakage in InGaN lasers.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years