Laser systems are utilized in quantum for various applications. Multiple wavelengths and tailored solutions are required depending on the technology that the laser will be applied to. For instance, lasers can be used for controlling particles and molecules, including excitations of the quantum systems. Key performance requirements for lasers used in these applications include narrow linewidth, frequency stability, and single-frequency operation. This performance can be achieved with laser diodes with integrated gratings, such as distributed Bragg reflector (DBR) and distributed feedback (DFB) structures. Laser diodes offer benefits such as low power consumption, compact size, and easy integrability to photonic integrated circuits. In addition, on-chip integrated gratings have advantages over external cavity diode lasers: reduced complexity in systems, smaller size, and better robustness. In this work, we present narrow linewidth DBR laser diode operating in the 650 nm wavelength regime which is required for quantum applications such as repumping in trapped Ba+ ion computing. In-house epitaxial design is based on a GaAs/AlInP/AlGaInP structure, including GaInP quantum well. Grating region is implemented as surface grating, requiring electron beam lithography (EBL) and high-aspect ratio etching by inductively coupled plasma reactive ion etching (ICP-RIE). Results for multiple variants are presented to achieve optimal device performance and grating coupling efficiency, targeting narrow linewidth operation required for quantum applications such as trapped ion computing.
Lasers are a key enabling technology in the field of quantum computing, quantum sensing and quantum metrology. These applications require technically challenging properties from the lasers in use, such as stable and precisely controlled wavelength, up to watt level output power, and a narrow linewidth. Semiconductor diode lasers offer a very compact size, low power consumption, as well as scalability of cost and manufacturing volume due to their wafer scale manufacturing process. The monolithic integration of frequency selection on-chip in Distributed Bragg reflector (DBR) lasers offers advantages such as higher robustness, reduced system complexity and smaller size compared to external cavity frequency selection configurations. Thus, DBR lasers provide an optimal solution for a compact narrow linewidth laser source for selected quantum applications. Bandgap engineering of semiconductor gain media enables emission across the spectrum from UV to mid-IR. Wavelengths matching atomic transitions in the 7xx nm wavelength region include 760 nm and 770 nm for Yb, and 780 nm and 795 nm for Rb. In this work we describe the design, manufacturing, and performance of DBR lasers in the 7xx nm wavelength regime. The effects of key device design parameters are investigated to optimize the device performance. These include emitter width, gain and grating length, grating duty cycle, and residual layer thickness. To further scale the laser output power, tapered amplifiers are manufactured and characterized. The lasers are integrated into a laser system platform containing optical isolation, fiber coupling, low-noise laser drivers and temperature controllers. The system includes features such as compact footprint, controlled environment, cloud-connectivity and predictive maintenance.
Quantum information processing based on trapped ion technology is one of the leading platforms, heavily relying on a set of single-frequency lasers in its core operations. Narrow linewidth lasers perform atom photoionization, cooling, state-preparation and read-out. In this work we demonstrate in-house designed and fabricated optically pumped semiconductor laser gain mirror comprised of InGaAs quantum wells and GaAs/AlAs distributed Bragg reflector. We demonstrate in-house designed and fabricated single-frequency laser operating at 493 nm for Ba+ cooling. Inherent power scaling potential, efficient intracavity frequency conversion, coupled with sub-MHz linewidth and wide gain tuneability make VECSELs advantageous semiconductor laser platform for various quantum technology applications.
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