The effectiveness of utilizing spatial light modulators (SLMs), developed at Sanders, for reducing some of the critical bottlenecks inherent within the Hyperspectral Imaging (HSI) chain will be presented. Specifically, the more common classification, detection, and endmember selection algorithm used in HSI, which are suitable for optical implementation, are presented here. These algorithms were reformulated for implementation on a compact Vander- Lugt correlator based on Sanders' multi-level quantum well (MQW) spatial light modulator (SLM). Sanders devices are GaAs Fabry-Perot vertical cavity multiple quantum well (MQW) SLMs consisting of MQW optical chips flip-chip bonded to Si/CMOS driver circuitry. Details of the reformation of Pixel Purity Index, an endmember selection algorithm, to the optical correlator is presented as well as a projection of its performance based on software simulations. In addition, hardware results are presented for Spectral Angle Mapper based on a Vander-Lugt implementation using Sanders 128 X 128 binary SLMs. An opto-electronic hyperspectral workstation accelerator is proposed which is based on a Vander-Lugt correlator using Sanders' MQW-SLMs and FPGA- based compute nodes and has the capability of 6.4 Million 1D correlations per second for HSI endmember selection, classification and detection.
A vanderLugt correlator is under construction using two Sanders binary Multiple Quantum Well Spatial Light Modulators. This correlation is part of the U.S. Army Aviation and Missile Command's three-year program to evaluate the latest generation hardware available for image processing. The Sanders modulators offer extremely high frame rates that make them attractive for image processing applications. The limiting factor in this correlator will actually be the output detector rather than the spatial light modulator. The correlator will be evaluated using infrared imagery to determine its performance in a target cueing/target screening applications. The results from these experiments as well as future plans will be presented.
We review GaAs Fabry-Perot vertical cavity multiple quantum well (MQW) spatial light modulators (SLMs) developed at Sanders, a Lockheed Martin Company, and demonstrate their use in optical image correlation. These MQW SLMs are reflective- mode modulators using electrically-tunable absorption to modulate the reflected intensity. The operation of the MQW SLMs with a newly-developed Labview graphical user interface is described. A compact Vander-Lugt image correlator is described which was configured using MQW SLMs: binary 128 X 128 pixel image input with a binary filter plane. In addition, the architecture of 8-bit gray-scale MQW-SLM module developed at Sanders is discussed. The performance of the image correlator was characterized using amplitude-encoded binary phase-only filters and various test targets including test imagery supplied by US Army AMCOM, and is compared with simulations for peak-to-secondary efficiencies on these data. Finally, high-speed (250,000 frames per second) target recognition of 128 X 128 pixels binary input imagery is demonstrated.
We review GaAs Fabry-Perot vertical cavity electro-optical devices constructed at Lockheed Martin Sanders, with particular attention to spatial light modulators and discuss a number of their applications. Our manufacturing processes enable the construction of large format, highly-uniform optical modulator and smart pixel arrays integrated with silicon CMOS VLSI circuitry. These devices can be used for a wide variety of applications including: optical computing for target recognition and signal processing, optical data routing, optical interconnect systems, and optical memory storage and access.
GaAs asymmetric Fabry-Perot vertical cavity modulators are useful in a wide variety of applications. Vertical cavity devices have employed amplitude or phase modulation for optical switching. Amplitude modulators have been demonstrated in large format arrays. Additional uses for the pixels include directional modulation, detection, and light- emitting capability. When arrays of these deices are integrated with electronic circuits - most significantly silicon CMOS VLSI - at the pixel level, large, complex optical spatial light modulators, detectors, transceivers, computation devices, and emitters can be created for a wide variety of applications. These applications range from target recognition to SAR radar processing, to optical data routing, to optical interconnect systems, to optical memory access.
GaAs asymmetric Fabry-Perot vertical cavity modulators are useful in a wide variety of applications. Such modulators have been demonstrated in large format arrays. The majority of vertical cavity devices have employed amplitude modulation to produce optical switching. Additional uses for the pixels include detection, phase modulation, directional modulation, and light-emitting capability. When arrays of these devices are integrated with electronic circuits-most significantly silicon CMOS VLSI-at the pixel level, large, complex optical spatial light modulators, detectors, transceivers, computation devices, and emitters can be created for a wide variety of applications. These applications range from target recognition to SAR radar processing, to optical data routing, to optical interconnect systems, to optical memory access.
The nonlinear characteristics of InSb and Hg1-xCdxTe were compared at room temperature with a CO2 laser operating at 10.6 micrometers . Overall, undoped InSb was found to be more promising than Hg1-xCdxTe (0.226
The large third order susceptibility of Hg1_CdTe makes it a very promising material for many applications, including optical switching. There have been numerous studies' 4) ofthe optical nonlinearities of Hg1_CdTe and it is well known that for values ofx near 0.2 and for 10.6 ,tm radiation, both nonlinear absorption arising from two photon absorption and nonlinear refraction arising from the charge carriers generated by two photon absorption play a role in determining the overall nonlinearity. To optimize the performance of a device that utilizes the nonlinearity of Hg1 _CdTe it is sometimes necessary to separate the relative contributions of these two mechanisms. The recently developed "z-scan" technique provides a convenient way of achieving this5. We present here a study of the nonlinearity of Hg1_Cd7Te using the z-scan method. In the next section, we first describe a theory of z-scan results expected for the external self focusing case. Although there are many theoretical studies67 of the external seLf focusing case, it is hard to find them presented in a general form from which many cases of interest can be easily evaluated. Moreover, the refractive nonlinearity is usually assumed to be of the Kerr-type, which is not in general true. Also, the effects of nonlinear refraction and absorption are usually not considered together. We present our results here in terms of dimensionless parameters, and inclilde the near field and far-field effects. We also take into account the time dependences of the incident laser beam and the nonlinearity of the medium. The results are presented in forms of integrals which can be evaluated for arbitrary nonlinear phase changes. Next, we apply the theory to the case of Hg1 _Cd1Te in which the dominant nonlinear phase change arises from refraction due to generated free carriers and the dominant nonlinear absorption arises from two-photon absorption. The generation of the charge carriers via two-photon absorption and their decay by means of Auger recombination are taken into account. The temporal profile of the laser beam used in the experiment described in section 3 was close to Gaussian-this was taken into account in the theory.
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