As the required minimum feature size is rapidly down to sub- micron at photomask, the fabrication of alternate lithography techniques to extend and prolong current technology becomes critical important. So recently MoSi PSM are being applied in semiconductor lithography, primarily for high density layers such as found in memory chips. The increasing use of MoSi based attenuated phase shift masks necessitates defect reducing on the MoSi phase shift mask reticles. In this paper, in order to reduce the defect on the phase shift mask reticles, we will discuss the results of several experiments, utilizing CHF3/)2 gas mixture and SF6/He gas mixture chemistries and various process sequences. This paper reports the results of defect reducing for MoSi attenuated phase shifting masks using an inductively coupled plasma system.
We have investigated the performances of positive Chemically Amplified Resist (CAR) with High Acceleration Voltage System on mask fabrication, widely. As we had expected, the resolution and pattern fidelity both after development and after etching were improved dramatically, because of its high contrast and good dry etching durability. As a result, practical resolution limitation was 0.2 micrometer and CD linearity for 0.2 micrometer to approximately 1.0 micrometer pattern range was 0.034 micrometer with Proximity Effect Correction (PEC). We obtained CD uniformity of 31 to approximately 55 nm, to 120 X 120 mm2 area.
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