Dr. Libor Vyklicky Profile

Dr. Libor Vyklicky

at IBM Thomas J Watson Research Ctr

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Author

Publications (4)

Proceedings Article | 16 April 2011 Paper

Developable BARC (DBARC) technology as a solution to today's implant lithography challenges

James Cameron, Jin Wuk Sung, Sabrina Wong, Adam Ware, Yoshihiro Yamamoto, Hiroaki Kitaguchi, Libor Vyklicky, Steve Holmes, Irene Popova, Ranee Kwong, Pushkara Rao Varanasi

Proceedings Volume 7972, 797214 (2011) https://doi.org/10.1117/12.881614

KEYWORDS: Lithography, Optical lithography, Control systems, Reflectivity, Coating, Photoresist processing, Antireflective coatings, Etching, Standards development, Bottom antireflective coatings

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Proceedings Article | 26 March 2010 Paper

Design and development of production-worthy developable BARCs(DBARCs) for implant lithography

James Cameron, John Amara, Jin Wuk Sung, David Valeri, Adam Ware, Kevin O'Shea, Yoshihiro Yamamoto, Hiroaki Kitaguchi, Libor Vyklicky, Irene Popova, Pushkara Varanasi

Proceedings Volume 7639, 76390H (2010) https://doi.org/10.1117/12.846708

KEYWORDS: Semiconducting wafers, Oxides, Lithography, Silicon, Optical lithography, Resistance, Photoresist materials, Electroluminescence, Reflectivity, Critical dimension metrology

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Proceedings Article | 1 April 2009 Paper

Progress towards production worthy developable BARCs (DBARCs)

James Cameron, John Amara, Gregory Prokopowicz, Jin Wuk Sung, David Valeri, Adam Ware, Kevin O'Shea, Yoshihiro Yamamoto, Tomoki Kurihara, Libor Vyklicky, Wu-Song Huang, Irene Popova, Pushkara Rao Varanasi

Proceedings Volume 7273, 72733L (2009) https://doi.org/10.1117/12.814421

KEYWORDS: Lithography, Silicon, Etching, Standards development, Optical lithography, Reflectivity, Polymers, Carbon, Reflection, Photoresist materials

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Developable bottom anti-reflective coating (DBARC) technology holds promise in two main areas of lithography. The first application of DBARC is in implant lithography where patterning implant levels would greatly benefit from improved reflection control such as provided by a conventional BARC. However, implant layers cannot withstand BARC open etch thereby making DBARC an attractive solution as the resist and DBARC are simultaneously dissolved during the development step leaving the underlying substrate ready for implantation. In comparison to current implant processes with top anti-reflective coatings (TARC), DBARCs are anticipated to offer improvements in reflection control which would translate to improved CDU and increased process window for both KrF and ArF implants. Indeed, this area has long been considered the ideal insertion point for DBARC technology. The second area where DBARC technology can make a significant impact is in non-implant lithography. In this large segment, the ability to replace a conventional BARC with a DBARC affords the device maker the ability to simplify both lithographic and integration processes. By replacing the BARC with a DBARC, the BARC open etch is negated. Furthermore, by applying this strategy on multilayer stacks it is possible to greatly simplify the process by avoiding both CVD steps and pattern transfer steps thereby easing integration. In this area, DBARC technology could have merit for low k1 KrF and ArF (dry) lithography as well as in immersion ArF processes. This paper describes our results in designing production worthy DBARCs for both implant and non-implant applications. A newly developed KrF DBARC platform is evaluated for logic implant applications and compared to a standard TARC implant process. Post develop residue and defectivity are checked for the new platform and the results compared to production worthy BARC and implant resists. A new ArF platform was also developed and initial lithographic results are reported for an implant application. Several non-implant applications were also investigated and results are reported for high resolution KrF and ArF (dry) lithography as well as an immersion ArF process.

Proceedings Article | 26 March 2008 Paper

Graded spin-on organic bottom antireflective coating for high NA lithography

Dario Goldfarb, Sean Burns, Libor Vyklicky, Dirk Pfeiffer, Anthony Lisi, Karen Petrillo, John Arnold, Daniel Sanders, Aleksandra Clancy, Robert Lang, Robert Allen, David Medeiros, Dah Chung Owe-Yang, Kazumi Noda, Seiichiro Tachibana, Shozo Shirai

Proceedings Volume 6923, 69230V (2008) https://doi.org/10.1117/12.772268

KEYWORDS: Reflectivity, Polymers, Photoresist materials, Silicon, Etching, Lithography, Optical lithography, Interfaces, Multilayers, Semiconducting wafers

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