We describe a lithographic approach—nanocrystal plasma polymerization-based lithography—in which colloidal nanocrystal assemblies (CNAs) are used as the inorganic resist and, potentially, the active material. The patterning process is based on a change in the dispersibility of the CNAs in solvents as a result of the exposure to plasmas. Plasmas can etch the capping ligands from the exposed area. During the development step, the unexposed area of CNAs is redispersed, leaving behind the patterned area, similar to what is expected from negative photoresist.
We describe a lithographic approach – Nanocrystal Plasma Polymerization (NPP)-based lithography (Figure 1) – where colloidal nanocrystal assemblies (CNAs) are used as the resist and, potentially, the active material. The patterning process is based on a change in the dispersibility of the CNAs in solvents as a result of the exposure to plasmas. Plasmas can etch the capping ligands from the exposed area. During the development step, the unexposed area of CNAs are redispersed leaving behind the patterned area.
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