The introduced design is a 1 × 8 optical power splitter using MMI structure and taper output branches in GaN semiconductors. The design has been conducted theoretically using 3D FD-OptiBPM to improve the power distribution. The modelling structure used 300 nm AlN and 200 nm AlGaN as the buffer layer on Sapphire respectively. The numerical experiment is carried out at an optical telecommunication wavelength at λ = 1.55 μm. The refractive indices of the layers used are nTE = 2.279 ± 0.001 and nTM = 2.316 ± 0.001. The result showed that the optimum width and thickness of input and output rib waveguides are 4 μm and support only single mode propagation. The MMI-based optical power splitter with a length of 2010 μm and a width of 85 μm is the best result. In this proposed design, the output power splitted in almost uniform into eight output branches. It is also shown that the total relative power at the output ports is 0.96 with an excess loss of 0.28 dB and power imbalance of 0.13 dB.
The Mach-Zehnder Interferometer is one of the fundamental components in a photonic circuit. It has a variety of functions, such as wavelength filtering, optical switching, and optical sensing. Gallium Nitride (GaN) semiconductor-based devices have been a source of interest for photonic device researchers, owing to their ability to operate at high temperatures and high power levels. In this work, we have investigated the effect of wavelength variation on the relative power in the Mach- Zehnder Interferometer structure, based on two directional couplers using GaN on Sapphire as a preliminary study to design the wavelength selections. The structure was optimised using OptiBPM with the beam propagation method. We optimised the structure by varying length of the waveguide and the gap between the top and bottom waveguide. Based on the results of the numerical experiment, we found the best length and gap value of the Mach-Zehnder Interferometer to be 14500 μm and 36μm. It also shown that optical field propagation is uniform and the relative power reaches 0.93 at a 1.55μm wavelength. The simulation was conducted using a wavelength range from 1.50 up to 1.60 μm with increments of 0.01 μm to obtain the performance of structure at the C-band range. By varying wavelength from 1.50 up to 1.60 μm, the result indicate that the optical field propagation is uniform and the relative power almost stable at 0.9.
The waveguide parameter optimisation for a simple 1 × 2 optical power divider based on three parallel rectangular waveguides in a gallium-nitride (GaN) semiconductor/sapphire is reported. The optical power divider works according to coupled-mode phenomena. The optimisation was conducted using the 3D FD-BPM method. The results showed that the best geometrical values are 780 μm length and 18 μm width accordingly. It is also shown that at propagation length of 780 μm, the optical power is successfully divided into a uniform two output beams, each with 47.5% of total input power. It is shown that at a wavelength of 1.55 μm, the optical power divider has an excess loss of 0.23 dB.
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