Fluorine doped tin oxide (FTO) and aluminum doped zinc oxide (AZO) were systematically investigated as alternatives
to indium tin oxide (ITO) for canonical poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C61 butyric acid methyl ester
(PCBM) polymer bulk heterojunction (BHJ) solar cells. Devices made with FTO performed twice as well as devices
made with ITO, establishing FTO as a suitable, low-cost ITO replacement. Ozone treatment was shown to be a critical
enabling element for both FTO and AZO. X-ray photoelectron spectroscopy (XPS) and device characteristics were used
to explain the effect of ozone treatment and the origin of open circuit voltage.
The band alignment at metal-organic interfaces has been extensively studied; however the electrodes in real devices
often consist of metals modified with dielectric buffer layers. We demonstrate that interface dipole theory, originally
developed to describe Schottky contacts at metal-semiconductor interfaces, can also accurately describe the injection
barriers in real organic electronic devices (i.e, at
electrode-organic interface). It is found that theoretically predicted
hole injection barriers for various archetype metal-organic and
metal-dielectric-organic structures are in excellent
agreement with values extracted from experimental measurements.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.