Colloidal quantum dots (CQDs) are a desirable platform for the development of next-generation infrared (IR) detectors thanks to their scalable synthesis, tunable optoelectronic properties, CMOS compatibility, and monolithic integration. However, CQD-based IR detectors typically have lower quantum efficiencies than epitaxial semiconductors and still require cryogenic cooling to achieve background-limited infrared photodetection. Developing CQD-based IR detectors that achieve state-of-the-art performance could bridge the gap between low-cost and high operating temperature detectors for IR sensing, especially for MWIR capabilities. Such a technology could significantly enable the advancement of compact, lightweight, and low-cost infrared systems for higher volume applications such as unmanned drone surveillance, driver-assisted vehicle navigation in low-visibility environments, and soldiermountable visual systems for advanced situational awareness. A systematic approach to materials development and detector design that relates material synthesis to detector optoelectronic properties will accelerate the development of CQD-based IR detector technologies. Such a system has not been explicitly established for CQD materials and their IR detectors. In this report, a process using a combination of empirical and numerical approaches has been described to guide and accelerate the development of CQD-based IR detectors. HgTe CQDs, one of the more mature IR CQD materials, was studied as a model system to provide useful feedback for establishing design rules and relationships between synthesis, material properties, and detector performance. Improvements to the performance of mid-wave infrared HgTe CQD photodetectors as an outcome of this study are demonstrated.
Flexible infrared detectors with multispectral imaging capability are attracting great interest with increasing demand for sensitive, low-cost and scalable devices that can distinguish coincident spectral information and achieve wide field of view, low aberrations, and simple imaging optics at the same time. However, the widespread use of such detectors is still limited by the high cost of epitaxial semiconductors like HgCdTe, InSb, and InGaAs. In contrast, the solution-processability, mechanical flexibility and wide spectral tunability of colloidal quantum dots (CQDs) have inspired various inexpensive, high-performance optoelectronic devices covering important atmospheric windows from short-wave infrared (SWIR, 1.5 – 2.5 μm) to mid-wave infrared (MWIR 3 – 5 μm). Here, a potential route leading to flexible infrared electronic eyes with multispectral imaging capability is demonstrated by exploring HgTe CQDs photovoltaic detectors. At room temperature, the HgTe CQDs detectors demonstrate detectivity D* up to 6 × 1010 Jones in SWIR and 6.5 × 108 Jones in MWIR. At cryogenic temperature, the MWIR D* becomes BLIP and increases to 1 × 1011 Jones. Besides high D* , the HgTe CQDs detector shows fast response with rise time below 300 ns. By stacking CQDs with different energy gaps or coupling CQDs with tunable optical filters, dual-band and multi-band infrared detection can be achieved in wide spectral ranges. Finally, infrared images are captured with flexible HgTe CQDs detectors at varying bending curvatures, showing a practical approach to sensitive infrared electronic eyes beyond the visible range.
Infrared multispectral imaging with curved focal plane array (FPA) is attracting great interest with increasing demand for sensitive, low-cost and scalable devices that can distinguish coincident spectral information and achieve wide field of view, low aberrations, and simple imaging optics at the same time. However, the widespread use of such detectors is still limited by the high cost of epitaxial semiconductors like HgCdTe, InSb, and InGaAs. In contrast, the solution-processability, mechanical flexibility and wide spectral tunability of colloidal quantum dots (CQDs) have inspired various inexpensive, high-performance optoelectronic devices covering important atmospheric windows from short-wave infrared (SWIR, 1.5 – 2.5 μm) to mid-wave infrared (MWIR 3 – 5 μm). Here, a potential route leading to infrared electronic eyes with multispectral imaging capability is demonstrated by exploring HgTe CQDs photovoltaic detectors. At room temperature, the HgTe CQDs detectors demonstrate detectivity D* up to 6 × 1010 Jones in SWIR and 6.5 × 108 Jones in MWIR. At cryogenic temperature, the MWIR D* becomes BLIP and increases to 1 × 1011 Jones. Besides high D* , the HgTe CQDs detector shows fast response with rise time below 300 ns. By stacking CQDs with different energy gaps or coupling CQDs with tunable optical filters, dual-band and multi-band infrared detection can be achieved in wide spectral ranges. Finally, infrared images are captured with flexible HgTe CQDs detectors at varying bending curvatures, showing a practical approach to sensitive infrared electronic eyes beyond the visible range.
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