The optically stimulated aggregation-induced emission (OS-AIE) technology has the potential to achieve petabit-level capacity based on AIE dye-doped photoresist. Nevertheless, the OS-AIE technology is constrained by its relatively low recording speed. To circumvent the problem, hexaphenylsilole (HPS) was doped into a photoresist film. It was found that there is not a straightforward positive correlation between emission intensity and laser power. When the recording power was 1.2 mW, a notable decrease in fluorescence was observed in the central region of the dot in comparison to the peripheral area. Consequently, this method enables a single beam to rapidly record data comprising 3-bit information, which will facilitate the implementation of OS-AIE data storage.
Different from the quenching effect of conventional dyes, aggregation-induced emission (AIE) dyes radiate fluorescence with the increase of aggregation state, which is a new application in optical storage. In order to increasing the fluorescence contrast of information recording point, a higher writing beam is required. It means that the fluorescence contrast of information point is not excellent at low writing laser power, which undoubtedly improves the bit error rate of information readout. To circumvent the above problem, we doped Mg2 + ions in tetrastyrene (TPE) resin and found that its fluorescence intensity was enhanced. Under this feature, we use the same writing power and find that the fluorescence contrast of its information is also significantly enhanced. Our results provide a way to realize super-resolution recording for AIE optical storage, and to explore the use of AIE dye doped photopolymers chemical sensors.
We propose an application in optical data storage (ODS) of tetraphenylethene (TPE)-doped photopolymer, which has the attribute of aggregation-induced emission. High-contrast fluorescence intensities of two different photopolymer films were verified. The photopolymer host was solidified at the focal point of a high-numerical-aperture lens. We recorded data points inside the TPE-doped photopolymer matrix by using this property and obtained fluorescence intensity difference between the exposure regions and the non-exposure regions. This attribute paves a new way for ODS and opens the way to exploring the possibility of utilizing the TPE-doped photopolymer as chemical sensors and components of organic light-emitting diodes.
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