A parametric study was conducted on coupled-cavity on-chip lasers to investigate the feasibility of reducing the lasing linewidth. The study showed that the coupled-cavity structure achieved up to 7 orders of magnitude linewidth reduction. Increasing the number of QW/QD layers (or QD density-per-layer) resulted in higher optical power and narrower linewidths. However, in the QW case, increasing the layers reduced efficiency and increased the input-power requirement for locking, while in the QD case, increasing the QD layers/density increased the efficiency and decreased the input-power requirement. The study recommends minimizing the number of QW layers and maximizing the number of QD layers at moderate and low current injection, respectively.
As trapped ion systems add more ions to allow for increasingly sophisticated quantum processing and sensing capabilities, the traditional optical-mechanical laboratory infrastructure that make such systems possible are in some cases the limiting factor in further growth of the systems. One promising solution is to integrate as many, if not all, optical components such as waveguides and gratings, single-photon detectors, and high extinction ratio optical switches/modulators either into ion traps themselves or into auxiliary devices that can be easily integrated with ion traps. Here we report on recent efforts at Sandia National Laboratories to include integrated photonics in our surface ion trap platforms.
The planetary boundary layer (PBL) is a key interface of energy exchange between the surface and atmosphere, however, current spaceborne sensors are not optimized to measure in this region. There is significantly more PBL temperature and humidity information content in the microwave spectrum that current satellite instruments resolve. The photonic spectro-radiometer developed under NASA ESTO ACT-20 program capable of fully resolving the microwave spectrum to return all PBL information in the microwave spectrum. A novel photonic integrated circuit is designed having integrated a modulator for up-conversion of signals into optics domain, an arrayed waveguide grating and star couplers with filters.
We report the current progress in the development of a compact, deployable cold-atom interferometry sensor platform towards atomic sensors for position, navigation, and time (PNT) applications. A simplified atomic sensor head with diffractive optics, an alignment-free optical package, and photonic-integrated-circuit (PIC) compatible laser architecture [1] are essential for its compactness and deployability. This cold-atom sensor platform can be generally applied to gravimeters, accelerometers, gyroscopes, and clocks, and the sensor platform includes significant engineering efforts in the development of grating-mirror magneto-optical traps (G-MOTs), custom titanium vacuum package with passive pumping, and silicon photonics multi-channel on-chip single sideband modulators.
Multidimensional coherent spectroscopy maps the detuning dependence of the upper (UP) and lower (LP) excitonpolariton branches1 in a wedged microcavity with a single InGaAs quantum well at 5 K. Features on the diagonal correspond to intra-action coherences of the UP and LP branches. Off-diagonal peaks are interaction coherences between the UP and LP branches. With increasing detuning (Δ), all peaks move to higher energy, the exciton-like (EEX) and cavity-like (Eγ) modes swap position and have maximum intensity near the anti-crossing at Δ=0. An isolated biexciton (B) is only seen at Δ<0, separated by a binding energy of approximately 2 meV. For Δ>0, the spectral weight of the off-diagonal features swap, as the LP and B come into resonance. This indicates that the off-diagonal features are sensitive to the interactions including two-quantum contributions and that a situation similar to a Feshbach resonance exists.2 Polarization of two-quantum contributions show spin sensitive two-polariton and new biexciton correlations. The latter likely influence the Feshbach resonance between biexcitons and two-polariton states. The two-quantum signatures also demonstate that biexcitons perturb the light-matter coupling in the microcavity to reduce the mixed two-polariton contributions. Detuning dependence of zero-quantum contributions show Raman-like coherences that are enhanced near zero detuning. Asymmetry of the Raman coherences are indicative of many-body interactions, which also grow stronger as the light-matter interactions are enhanced near zero deuning.
The history of semiconductor quantum optics group in the College of Optical Sciences will be discussed. The work from planar microcavities including VCSELs, photonic crystal cavities leading to the observation of strong-coupling between an L3 cavity and a quantum dot, and now metallic cavities coupled to quantum wells and quantum dots will be described.
A novel optical bistable device based on an electrically coupled semiconductor optical amplifier (SOA) and a bipolar
juncture transistor (BJT) is proposed and experimentally demonstrated. The measured switching time is about 0.9-1.0 us,
mainly limited by the electrical capacitance of the SOA and the parasitic inductance of the electrical connections.
However, the effects of parasitic components can be reduced employing current electronic-photonic integration circuits
(EPIC). Numerical simulations confirm that for capacitance values in tens of femtofarads switching speed can reach tens
of GHz.
A novel optical switching technique based on two electrically coupled SOAs (S-SOAD) operating in reverse-bias mode
is proposed and experimentally demonstrated. The device produces electrical and optical outputs with both non-inverted
and inverted hysteresis behavior. The S-SOAD operates on the basis of two optoelectronic effects. The first is an
electrical bistability resulting from the connection of two p-i-n structures in series. The second is the quantum-confined
Stark effect in the multi-quantum-well structure of the SOA which is responsible for the optical bistability. This effect
causes an electro-absorption modulation of the transmitted light based on the switching voltages across the p-i-n
structures.
Experiments show optical switching at MHz frequencies and rise/fall times lower than 1.1 us, limited mainly by the
electrical capacitance of the SOAs and the parasitic inductance of the connecting wires. The electrical effects can be
mitigated by photonic integrated circuit manufacturing. Predictions of the device performance at high frequencies are
based on a proposed hybrid optoelectronic model of the S-SOAD. In this model each SOA is modeled as a set of parallel
and series electronic components including optical parameters such as the responsivity and optical transmission of the
SOA. System simulations confirm that for capacitance values in tens of femto-Farads the switching-speed increases up
to GHz range. Results for the bistability behavior and switching time as a function of the electrical and optical
parameters will be presented.
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