Dr. Michael Oehme Profile

Dr. Michael Oehme

at Univ. Stuttgart

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 2 October 2024 Presentation + Paper

Pulse tunable SiGeSn/GeSn multi-quantum-well microdisk lasers

L. Seidel, T. Liu, O. Concepcion, D. Spirito, A. Benkhelifa, V. Kiyek, J. Schulze, B. Marzban, G. Capellini, J. Witzens, D. Grützmacher, D. Buca, M. Oehme

Proceedings Volume 13109, 1310909 (2024) https://doi.org/10.1117/12.3028016

KEYWORDS: Pulsed laser operation, Tunable lasers, Germanium, Whispering gallery modes, Silicon, Semiconductor lasers, Scanning electron microscopy, Quantum processes, Pulse signals

Read Abstract +

Proceedings Article | 2 October 2024 Presentation + Paper

Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure

Maurice Wanitzek, Michael Hack, Harishnarayan Ramachandra, Lukas Seidel, Daniel Schwarz, Jörg Schulze, Michael Oehme

Proceedings Volume 13109, 1310907 (2024) https://doi.org/10.1117/12.3028061

KEYWORDS: Dark current, Diodes, Avalanche photodetectors, Germanium, Design, Electric fields, Photocurrent, Interfaces, Avalanche photodiodes, Etching, Short wave infrared radiation

Read Abstract +

Proceedings Article | 2 October 2024 Presentation + Paper

In situ, non-invasive novel measurement method for the determination of integrated waveguide losses

Michael Hack, Bennet Kugler, Maurice Wanitzek, Ponraj Vijayan, Jörg Schulze, Michael Oehme

Proceedings Volume 13109, 1310908 (2024) https://doi.org/10.1117/12.3028025

KEYWORDS: Signal attenuation, Waveguides, Amorphous silicon, Spectroscopy, Scattered light, Scanning electron microscopy, Cladding, Surface roughness, Interfaces, In situ metrology

Read Abstract +

Proceedings Article | 5 March 2022 Open Access

Modeling and design of an electrically pumped SiGeSn microring laser

B. Marzban, L. Seidel, V. Kiyek, T. Liu, M. Zöllner, Z. Ikonic, G. Capellini, D. Buca, J. Schulze, M. Oehme, J. Witzens

Proceedings Volume 12006, 120060K (2022) https://doi.org/10.1117/12.2609537

KEYWORDS: Microrings, Electroluminescence, Absorption, Scanning electron microscopy, Resistance, Germanium, Diodes, Semiconductors, Semiconductor lasers

Read Abstract +

DOWNLOAD PAPER

Proceedings Article | 21 May 2018 Paper

SiGeSn material for integrated optical devices

M. Oehme, D. Schwarz, C. Clausen, I. Fischer, J. Schulze

Proceedings Volume 10686, 106860C (2018) https://doi.org/10.1117/12.2318011

KEYWORDS: Germanium, Tin, Silicon, Photodetectors, Diodes, Doping, Integrated optics, Heterojunctions, Optical components, Annealing

Read Abstract +

Proceedings Article | 20 February 2017 Presentation + Paper

Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)

Bernhard Schwartz, Michael Oehme, Roman Koerner, Stefan Bechler, Jörg Schulze, Martin Kittler

Proceedings Volume 10108, 101080D (2017) https://doi.org/10.1117/12.2249564

KEYWORDS: Germanium, Light emitting diodes, Silicon, Electroluminescence, Luminescence, Silicon photonics, Photonics, Diodes, Tin, Molecular beam epitaxy, Doping

Read Abstract +

Proceedings Article | 27 February 2015 Paper

Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers

B. Schwartz, T. Arguirov, M. Kittler, M. Oehme, K. Kostecki, E. Kasper, J. Schulze

Proceedings Volume 9367, 93671H (2015) https://doi.org/10.1117/12.2080816

KEYWORDS: Light emitting diodes, Electroluminescence, Germanium, Doping, Silicon, Antimony, Quantum wells, Tin, Luminescence, Quantum dot light emitting diodes

Read Abstract +

Proceedings Article | 22 May 2013 Paper

Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures

M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, K. Ulbricht, E. Kasper, J. Schulze

Proceedings Volume 8767, 87670C (2013) https://doi.org/10.1117/12.2017168

KEYWORDS: Absorption, Diodes, Modulation, Silicon, Photons, PIN photodiodes, Modulators, Annealing, Germanium, Molecular beam epitaxy

Read Abstract +

Proceedings Article | 22 May 2013 Paper

Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors

Mathias Kaschel, Marc Schmid, Martin Gollhofer, Michael Oehme, Erich Kasper, Jörg Schulze

Proceedings Volume 8767, 87670D (2013) https://doi.org/10.1117/12.2017008

KEYWORDS: Sensors, Doping, Germanium, Photodetectors, Silicon, Resistance, Heterojunctions, Capacitance, Modulators, Optical testing

Read Abstract +

Proceedings Article | 6 March 2013 Paper

Light from germanium tin heterostructures on silicon

E. Kasper, M. Kittler, M. Oehme, T. Arguirov

Proceedings Volume 8628, 86280J (2013) https://doi.org/10.1117/12.2006594

KEYWORDS: Tin, Germanium, Silicon, Semiconductors, Electroluminescence, Light emitting diodes, Absorption, Luminescence, Heterojunctions, Annealing

Read Abstract +

Proceedings Article | 2 June 2005 Paper

Spectroscopical analyis of strained silicon quantum wells

J. McCarthy, E. Ni Mhuircheartaigh, K. Lyutovich, M. Oehme, T. Perova, R. Moore, W. Blau

Proceedings Volume 5824, (2005) https://doi.org/10.1117/12.606601

KEYWORDS: Silicon, Quantum wells, Germanium, Transmission electron microscopy, Raman spectroscopy, Spectroscopy, Micro raman spectroscopy, Interfaces, Statistical analysis, Raman scattering

Read Abstract +

Showing 5 of 11 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years