As semiconductor technology became more integrated, the numerical aperture (NA) of extreme ultraviolet (EUV) exposure technology has increased from 0.33 to 0.55 to realize finer patterning. High NA EUVL aims to enable 8 nm half pitch resolution. As the NA increases and a smaller linewidth needs to be implemented, the mask 3D effects on patterning will become more severe. For mass production of EUV, it is essential to find an optimal absorber structure to alleviate serious problems such as mask 3D effects and shadowing effects. Among the various factors constituting the EUV photomask, phase shift and reflectance of the absorber are the most important factors that determine the image quality. Through computational simulation, the optimal structure was selected in consideration of phase shift and reflectance, and imaging performance and process latitude were calculated.
Since EUV pellicle is very thin, It can be affected easily on its manufacturing process or the exposure process. The Pellicle has several types of stress, above all the pellicle has a residual stress from its manufacturing process. To determine the effect of residual stress on the pellicle, we calculated residual stress of several types of multi-layer pellicle by using formula. We could confirm that the residual stress has non-negligible values through the calculation results, and we obtained the thermal stress of each pellicle by using finite element method (FEM). we optimized the pellicle through comparison of total stress by plus the calculated residual stress and the thermal stress. As a result, since the p-Si core pellicle with B4C capping satisfies both high transparent and low total stress, we chose p-Si core pellicle with B4C capping as a suitable pellicle.
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