High-power, efficient semiconductor laser bars are demanded in many applications including pumping solid-state lasers and fibers. A narrow beam divergence is essential for increasing coupling efficiency and realizing an overall simple, cost-effective system. In kilowatt-class laser bars with 4 mm resonator length containing multiple broad-area emitters (with stripe width varying within 90–1200 μm) that are fabricated using conventional processing techniques, a strong thermal lens is generated within the individual emitters during laser operation. The lensing effect becomes stronger with increasing operating power. This allows a large number of lateral modes to be guided within the resonator and contribute to the laser emission, consequently deteriorating the beam quality (i.e. leading to larger lateral beam divergence angle). An approach to reduce the lateral divergence of the bar by modifying the in-plane structure of the emitters is presented. Based on simulation results, multiple lateral emitter structures have been developed and measured in quasi-continuous wave mode at low and high heat conditions with thermal resistance of 0.02 K/W and 0.05 K/W, respectively, comparable to continuous-wave testing with advanced coolers. Experimental results show that the improved lateral structures lead to enhanced power-current performance and improved beam divergence. A reduction of around 20% (~2°) in the bar lateral beam divergence angle at 95% power content has been achieved in testing at 800 W, with a simultaneous 5%-points gain in conversion efficiency with the highest performance lateral emitter structure.
KEYWORDS: Semiconductor lasers, High power lasers, Temperature metrology, Continuous wave operation, Near field, Optical testing, Near field optics, Thermography
Results of an extended series of experimental studies into the beam parameter product (BPP) of high-power diode lasers are summarized, covering efforts to clearly diagnose the limiting factors and develop novel device technology to address these limits. We review diagnostic studies, separating BPP empirically into bias-dependent (thermal) and bias-independent (non-thermal) terms for convenience of analysis. First, we use monolithically grating-stabilized lasers to confirm the presence of a well-defined series of guided modes, rather than filaments. Second, we present results from a series of custom devices and tests (guided by targeted simulations). Third, we show that effects driven by thermal lensing and current spreading dominate the variation in BPP with bias. The residual bias-independent BPP background remains around 30- 50% of the total, and is most likely partly limited by gain-guiding effects. Fourth, the presence of longitudinal temperature variation due to non-uniform optical intensity along the resonator further degrades the bias-independent background level. Lateral current blocking technology is shown to reduce current spreading, and improve the bias-dependent BPP. Thermal engineering also improves bias-dependent BPP, achieved by varying epitaxial layer structure and by targeted changes in bar layout, clarified using measurements in thermography cross-referenced to simulation. In summary, we contend that experimental studies have allowed the effects that limit lateral BPP to be largely clarified, so that research efforts can now focus on developing device technology suitable for reducing BPP without other penalties. The background level to BPP remains an open topic, and further study is needed to better understand and address this.
GaAs-based 1-cm bars based on extreme-triple-asymmetric (ETAS) epitaxial designs are presented. The investigated structure shows low optical loss and weak power saturation at high current allowing high output power Popt and power-conversion-efficiency ηΕ. The resulting ETAS bars containing 20 emitters with 395 μm wide stripes and 4 mm long cavity, operate with the highest-to-date quasi-continuous-wave power (200 μs, 10 Hz) Popt = 1.9 kW, delivered from just one quantum well, with maximum ηΕ = 67% at THS = 298 K heat-sink temperature. High ηΕ = 62% is maintained at 1.0 kW and remains 55% at 1.5 kW. Even higher Popt = 2.26 kW is achieved at a reduced THS = 203 K. At 203 K, maximum ηΕ climbs to 74% while maintaining a high ηΕ < 60% up to 2 kW, and reaches 55% at 2.26 kW. We also present progress in lateral bar layout, which is further optimized for narrow lateral beam divergence and evaluated for the first time up to 2 kA current. Experimental results show that lateral far field at 95% power can be lowered by 2-3° without sacrificing Popt and ηΕ, reaching ~15° at 1.8 kW at 298 K. Polarization purity also remains < 95% across the full measured range.
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