Semiconductor quantum dots (QDs) offer various unique properties that make them interesting candidates for the use as gain media in semiconductor laser diodes.
MOVPE is used as the method of growth for the QD structures with high area density and vertically stacked QD layers. This leads to a broad gain spectrum, which enables laser devices with wide tuning ranges around 1300nm.
We incorporate this active region into edge-emitting laser structures, for the characterization of optical gain and absorption properties, as well as the inner losses.
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