The emission spectra of the upconversion fluorescence of Er3+/Yb3+ co doped transparent oxyfluoride glass ceramics have been studied. The decay rates and excited states life times are measured at room temperature. The kinetic scheme is derived by measuring independently the life times of the excited states of both Er3+ and Yb3+ ions.
The data represent life time test of a CW diode running in pulsed regime. It is shown that the reliability of CW laser diode run with 10 times higher peak currents is enough for many applications, where high peak power, high repetition rate diodes are a better choice than DPSS lasers.
The laser diodes are efficient sources of optical radiation. The maximum optical peak power depends on the pulse duration of the driving current pulse - reducing the pulse duration the safety peak power is increased. The aim of the study is to elaborate a methodology to determine the safety operation area of the high power laser diodes designed for CW operation. Using this methodology, the designer of certain laser devices may exploit the maximum of the laser diode under pulsed operation.
KEYWORDS: Databases, Laser marking, Image registration, Defense and security, Control systems, Manufacturing, Control systems design, System integration, Photonics, Lead
A new laser-marked security label is presented. The label allows an integrated and distributed
control scheme to be applied. The scheme incorporates a "closed circle" and allows internal
control. A possible application for vehicles is discussed.
KEYWORDS: Semiconductor lasers, Switching, Switches, Diodes, High power lasers, Power supplies, Modulation, Inductance, Digital filtering, Continuous wave operation
A new high power laser diode driver has been developed and tested. The possibilities for driving high power laser diode bars and stacks at high frequencies has been shown. The driver is with 0.05% noise and ripples at DC, and can be modulated with 15 ns rise/fall times at 100 A, with maximum frequency for square wave modulation up to 1 MHz. The spikes for the optical output at switching on/off are not exceeding 5%. The limitation of the used scheme with the existing commercial components allows frequencies up to 25 MHz and currents to 400 A to be reached.
The driver opens new applications for high rate data transmission at long range, fast scanning designators, materials processing, etc. with laser diodes with more than 100 W output power.
A new high power laser diode has been developed and tested. The possibilities for driving high power laser diode bars and stacks at high frequencies have been shown. The driver is with 0.05% noise and ripples at DC, and can be modulated with 15 ns rise/fall times at 100A, with maximum frequency for square wave modulation up to 5 MHz. The spikes for the optical output at switching on/off are not exceeding 5%. The limitation of the used scheme with the existing commercial components allows frequencies up to 25 MHz and currents to 400A to be reached. The driver opens new applications for high rate data transmission at long range, fast scanning designators, materials processing, etc. with laser diodes with more than 100W output power, which will be discussed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.