The photoluminescence(PL) spectra at room temperature for the Si-based samples doped by Nd, O+ by ion implantation
are measured. The results show that all the samples possess blue-violet photoluminescence properties under the
ultraviolet light excitation and its light emission is stable. The PL spectra has multiple peak structure. The results show the
intensity of PL spectra is closely relative to Nd and O+ implantation and to the temperature of thermal annealing. The
light emission is more greater for the sample of fisrt O+ then Nd ion-implanted silicon than the one of first Nd then O+
ion-implanted silicon. The light-emitiing mechanism is also analyzed.
The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by Nd by ion implantation
are measured. The results show that all the samples possess blue-violet photoluminescence properties under the
ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to the dose of
implantation and to the temperature of thermal annealing.The above samples were treated by anodization method. The
PL spectra of porous samples which were treated by HNO3 were measured. The results show light emission efficiency
of the porous samples that were treated by electro-chemical anodization etch and HNO3 is higher than those of ordinary
PS samples under the same measuring conditions.
The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer and thermal oxide Si samples doped Nd ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of Nd ion dose during ion beam synthesis within a certain limits, moreover, photoluminescence is closely relative to the temperature of thermal annealing. Besides, the feature and appearance of the samples was surveyed with atomic force microscopy (AFM).The photoluminescence mechanism for our samples is also discussed.
The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer thermal oxide Si samples doped by La ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the UV light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of La ion dose during ion beam synthesis within a certain limits. Moreover, PL is closely related to the temperature of rapid thermal annealing. Besides, the feature and appearance of the samples was surveyed, with atomic force microscopy. The photoluminescence mechanisms for our samples is also discussed.
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