We report a low-temperature 1.3μm AlGaInAs quantum-well laser pumped by a 1.06μm active
Q-switched laser quenched by a low-temperature vacuum system. An average power of 330mW is
achieved at temperature as low as 233K compared to the average power of 50mW obtained at
room-temperature without cooling device both at pumping repetition rate of 30 kHz. And the average
rate of gain peak shift was found to be 0.47 nm/K between 293-133 K.
We report the use of AlGaInAs quantum wells (QWs) as a saturable absorber in the
Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are
designed to locate the QW groups in the region of the nodes of the lasing standing wave for
avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of
6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.
We demonstrate an AlGaInAs saturable absorber with a periodic quantum wells (QWs)/barrier structure that can be
used to achieve an efficient high-peak-power and high-pulse-energy passively flashlamp-pumped Q-switched Nd:YAG
laser at 1.06 um. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing
wave to avoid damage. With an incident pump voltage of 14.5 J, a single pulse was generated with a pulse energy of 14
mJ and a Q-switched pulse width of 13 ns. The maximum peak power was greater than 1.08 MW.
We report a high-peak-power AlGaInAs 1.36-μm vertical-external-cavity surface-emitting laser (VECSEL)
optically pumped by a diode-pumped actively Q-switched Nd:GdVO4 1.06-µm laser under room-temperature operation.
The gain medium is an AlGaInAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by
metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW
was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%.
With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz.
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