Extreme Ultraviolet (EUV) lithography poses an ever greater challenge to RLS (resolution, line edge roughness, and sensitivity) than previous photolithography methods as lithographers try to achieve sub-14nm pitch in a single-exposure. Additionally, EUV is particularly susceptible to stochastic imaging defects. Although standard chemically amplified resists (CARs) can be exposed with EUV, these materials struggle to achieve resolution targets at manufacturable doses due to limitations in laser source power and resist sensitivity and contribute to stochastics by nature of their random distribution of components. An innovative approach with Inpria Metal Oxide Resists (MORs) can offer an alternative to overcome both EUV resolution and sensitivity limitations, as well as address stochastic defects. On the other hand, traditional sources of defectivity, such as particles, present another challenge, especially when moving toward high-volume manufacturing. Ultrahigh molecula r weight polyethylene (UPE) membrane filters have been used for metal oxide EUV resist filtration because of their high retention efficiency and excellent photochemical compatibility. However, newly designed UPE filters with innovative membrane morphology are needed to further lower defectivity rates with these new resists. This paper describes efforts to continue to improve metal oxide EUV resist defectivity through filtration optimization. A comparative study of the patterning performance of various Point-of-Use (POU) filters is presented. Several filters utilizing a variety of retention ratings and membrane designs were installed on a TEL Clean TrackTM Lithius ProTM Z series. A metal oxide EUV resist was filtered and coated on wafers that were subsequently analyzed for patterning defect performance. This study examines the efficacy of optimized filtration design to reduce defects and provides a recommendation to achieve lower defect density.
Extreme Ultraviolet (EUV) lithography poses an ever greater challenge to RLS (resolution, line edge roughness, and sensitivity) than previous photolithography methods, as lithographers try to achieve sub-14 nm pitch in a single-exposure [1-2]. Additionally, EUV is particularly susceptible to stochastic imaging defects[3]. Although standard chemically amplified resists (CAR) can be exposed with EUV, these materials struggle to achieve resolution targets at manufacturable doses due to limitations in laser source power and resist sensitivity and contribute to stochastics by nature of their random distribution of components. An innovative approach with metal-oxide resist can offer an alternative to overcome both EUV resolution and sensitivity limitations, as well as address stochastic defects[4-5]. On the other hand, traditional sources of defectivity, such as particles, presents another challenge, especially when moving toward high volume manufacturing. Ultrahigh molecular weight polyethylene (UPE) filters have been used for metal oxide EUV resist filtration because of their high retention efficiency and excellent photochemical compatibility. However, other filters with innovative materials are needed to further lower defectivity of these new resists. This paper describes efforts to continuously improve metal oxide EUV resist defectivity through filtration optimization. A comparative study of the patterning performance of various Point-of-Use (POU) filters is presented. Several filters utilizing a variety of retention ratings and membrane designs were installed on a TEL Clean TrackTM LITHIUS ProTM Z EUV series. A metal oxide EUV resist was filtered and coated on wafers that were subsequently analyzed for after etch inspection (AEI) patterning defect performance. This study examines the efficacy of optimized filtration design to reduce defects and provides a recommendation to achieve lower defect density.
Inpria has pioneered the development of high-resolution metal oxide (MOx) photoresists designed to unlock the full potential of EUV lithography. In addition to resolution, LWR, and sensitivity to enable advanced process nodes, there are also stringent defectivity requirements that must be realized for any resist system. We will review advances in post-etch defectivity based on: resist design and formulation, track process design, developer design, and etch optimization. We will present data supporting each of these topics quantifying the defect impact and will describe improvement strategies to take full advantage of such MOx resist systems.
While great advances have been made to move extreme ultraviolet (EUV) lithography toward manufacturing readiness, a difficult challenge remains. Although standard chemically amplified resists (CAR) can be exposed with EUV, these materials struggle to achieve resolution targets and are not nearly as sensitive as those created for ArF exposure. Non-CAR resists, such as metal-oxide resists, offer an alternative that achieve both EUV resolution and sensitivity targets. However, the inclusion of metal oxides poses a challenge to traditional filtration designed to remove unwanted dissolved contaminants from the fluid stream. Ultrahigh molecular weight polyethylene (UPE) filters have been used for metal oxide EUV resist filtration because of high retention efficiency and excellent photochemical compatibility. This paper describes our joint effort to improve Inpria metal oxide EUV resist defectivity usingfiltration optimization. A study comparing various Point-of-Use (POU) filters was conducted to identify filtration solutions that reduce defects in Inpria metal-oxide EUV resist coatings. Several filters utilizing a variety of retention ratings and membrane designs were installed on a TEL Clean TrackTM ActTM 12. A metal oxide EUV resist was filtered and coated on wafers that were subsequently analyzed for total wet particle counts. This study presents the efficacy of optimized filtration design to reduce defects in metal oxide EUV resists and provides a recommendation to achieve low wafer coating defects.
KEYWORDS: Extreme ultraviolet, Photoresist materials, Scanning electron microscopy, Metals, Photoresist processing, Semiconducting wafers, Extreme ultraviolet lithography, Line width roughness, Manufacturing, System on a chip
For generations lithographers have worked to overcome the difficulties associated with defect mitigation, and since EUV lithography has become mature enough for HVM this concern is warranting ever increasing attention to make such processes profitable. Even though much of the EUV defect effort is focused on stochastic defects, in this work we attempt to assess and understand process defects associated with the interaction between different films in an EUV stack. By understanding the behavior of specific underlayer materials and their chemistry within a given environment we have attempted to tune the surface energies to match the photoresist in the stack. With the correct process changes being applied, we have then worked to correlate the proper matching of surface energies with process defects. The current focus of our work is specifically line collapse, and we believe that developing a fuller understanding of the film interactions will ultimately lead to a more robust EUV process for HVM. We hereby present our work utilizing the SCREEN DUO coat develop track system with an ASML NXE:3300 in the imec Leuven cleanroom facility.
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