Watt-class semiconductor optical amplifiers (SOAs) at 1550nm are an attractive alternative to replace erbium-doped fiber amplifiers (EDFAs) in various applications including free space optical communications (FSO), with the potential to be more efficient, compact, and cost-effective while providing high-power diffraction-limited output. We present a single mode fiber-coupled packaged SOA delivering >30dBm (1.2W) of continuous wave ex-fiber power at 1550nm with 16dB of overall gain, enabled by recent advancements in diffraction-limited output from tapered semiconductor amplifiers. Preliminary data communications measurements are presented, with an open eye diagram achieved with >1W of output power at 10Gbps using the differential phase shift keying (DPSK) communications format. Watt-class collimated and fiber-coupled SOAs are available and being shipped to customers now.
Applications such as LIDAR, ranging/ sensing, and optical communications all require photonic components, such as sources, detectors, and modulators, to be integrated into a single system. For spaceborne applications, SWaP (size, weight and power) is a key consideration: a monolithic indium phosphide (InP) Photonic Integrated Circuit (PIC) can integrate many components onto a chip with a footprint of a few square mm. Photonic Wirebonding (PWB) enables seamless integration of best-in-class optical devices from disparate materials. Connecting and mode-matching different photonic components enables versatility and functionality unachievable by other methods, facilitating co-packaging. PICs and PWBs do not yet have spaceflight heritage: demonstrating increased Technology Readiness Level (TRL) is a key step toward use in orbital and spaceborne missions. Freedom Photonics presents our first hermetic photonic wirebonded PIC package, alongside recent environmental testing results demonstrating that our PIC and PWB technologies are suitable for the harsh conditions of launch and spaceflight: shock, vibration, radiation, and temperature cycling.
High brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 1500 – 1600 nm wavelength band could enable compact, direct diode solutions with performance metrics that previously could only be met by fiber-based lasers or solid-state laser systems. We report on high power, high beam quality diode lasers at 1550 nm based on a tapered chip architecture. We have demonstrated ⪆5 W of continuous wave output power at room temperature, with a slow axis beam propagation factor M2 of 1.1, corresponding to a slow axis linear brightness of 9.2 W mm-1 mrad-1. We have also demonstrated a fully packaged watt-class single mode fiber-coupled Semiconductor Optical Amplifier (SOA) based on this technology. This package delivers ⪆30 dBm (1.2 W) ex-fiber saturation output power, ten times higher saturation power than the prior state-of-the-art. This result is achieved with an input seed power of 30 mW (approximately 15 dBm), corresponding to an overall gain of approximately 16 dB. To demonstrate the functionality of the SOA, we have carried out linewidth measurements and data transmission measurements. These tapered lasers and amplifiers offer great potential benefit for many pumping and direct use applications.
Watt-class semiconductor optical amplifiers (SOAs) at 1550 nm are an attractive alternative to replace erbium-doped fiber amplifiers (EDFAs) in various applications including remote sensing, optical communications, illumination, and LIDAR, with the potential to be more efficient, compact, and cost-effective. We report a world record of a single mode fiber-coupled packaged semiconductor optical amplifier delivering >30 dBm (1.2 W) of continuous wave ex-fiber power at 1550 nm, enabled by recent advancements in diffraction-limited output from tapered diode laser amplifiers. This result is achieved with an input seed power of 30 mW (~15 dBm), corresponding to an overall gain of ~16 dB. Reliability data will be presented for our tapered laser chips, as will progress towards demonstration of high performance SOAs in an optical link. Watt-class SOAs are available and being shipped to customers now.
Watt-class semiconductor optical amplifiers (SOAs) at 1550 nm are an attractive alternative to replace erbium-doped fiber amplifiers (EDFAs) in various applications including remote sensing, optical communications, and LIDAR, with the potential to be more efficient, compact, and cost-effective. We report a world record of a single mode fiber-coupled packaged semiconductor optical amplifier delivering >30 dBm (1.2 W) of continuous wave ex-fiber power at 1550 nm, enabled by recent advancements in diffraction-limited output from tapered diode laser amplifiers. This result is achieved with an input seed power of 30 mW (~15 dBm), corresponding to an overall gain of ~16 dB, and the noise figure is calculated to be 5.4 dB. We have begun reliability testing of our tapered laser chips, and we are investing in the productization of these packaged watt-class SOAs.
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