In order to solve the problem that the large field of view and high resolution of the traditional single aperture optical system are difficult to realize at the same time, a curved compound eye system including a three-ring lens group is designed. Firstly, the relationship between the field of view of the sub-eye system and the total field of view is studied, and the arrangement of the sub-eyes is obtained. Then, according to the object image conjugate relationship between the incident window and the exit window, we obtained a geometric model of sub-eye stitching. The compound eye system designed by this method has a full field of view of 79.5°. The angular resolution of the central system is 0.01°, the edge system is 0.017°. The system is simulated and verified by the optical design software ZEMAX. Finally, the feature points of each sub-eye image are extracted by SIFT(Scale Invariant Feature Transform) algorithm. The extracted feature points are accurately matched by RANSAC(Random Sample Consensus) algorithm, Then we use a weighted average algorithm to splicing the image of the sub-eye. This research further promotes the application of bionic compound eye imaging systems.
The modification of graphene’s properties is essential for its applications. During the device preparation and morphology characterization, graphene is usually irradiated by electron beam. The process may induce defects such as damage and doping in graphene. Moreover, when the irradiated graphene is exposed in air, the defects will adsorb impurities, such as gas atoms, atomic groups, or molecules, leading to changes of the properties of graphene. Therefore, it is important to study the evolution of the properties of the irradiated graphene exposed in air. In this paper, the time evolution of the Raman spectra of graphene after irradiated by electron beam was measured. It is found that D peak appears after irradiation, indicating the formation of defects. The Raman spectra at different time after irradiation show redshifts and blueshifts of the peaks, because the carriers was p-type at first and then became n-type finally. It signifies that air exposure has changed the conducting properties of the irradiated graphene. The results suggest that air exposure has significant effect on defect engineering of graphene.
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