A frontside-illuminated single photon avalanche diode based on 110 nm CMOS process is proposed in this paper. The P-well/Deep N well multiplication junction is adopted to enhance the near infrared absorption. To reduce the dark count rate, only the well guard ring is used in the photosensitive region to avoid the defects caused by shallow trench isolation process. The SPAD achieves a DCR of 3.2 cps/μm2 at room temperature, a peak photon detection probability over 40% at 500 nm, and over 3.6% at 905 nm with 2.0 V excess bias voltage. The device we designed is very suitable for LiDAR applications.
Single photon avalanche diodes based on the state-of-the-art CMOS fabrication nodes have inspired a new era of low cost and high integration quantum-level image sensors. They have a broad application prospect in biology, chemistry, medicine, and many other fields of science and engineering. For each application, the diodes’ structure and size must be optimized empirically, while the device performance is difficult to predict theoretically. To assist in this iterative design process, this paper simulates the single photon avalanche diodes’ structures by Sentaurus-TCAD to optimize the electrical and optical performance. A new modeling method of PDP is proposed. The designed and manufactured SPADs have good performance.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.