We propose a fabrication process using dielectrophoretic (DEP) force for plasmonic devices as a light source. The 100nm wide Au nanowires fabricated by e-beam lithography and lift-off were used to trap 25nm diameter cadmium selenide (CdSe) QDs on its end-facet with DEP force. DEP force was induced around the nanowire using 8 Vpp, 3MHz sine wave. An Electric field of 108 V/m order and electric field gradient of 1015 V/m2 order intensity were calculated with COMSOL multiphysics simulation tool. And the values are enough to induce DEP force for QD trapping. Before the QD manipulations, polystyrene bead was used which is more rigid and influenced by DEP force than QD. Concentration of 10-5% order and approximately 120sec reaction time are considered with polystyrene bead and QD manipulations are accomplished with the conditions. Finally, the QDs were manipulated to the nanowires array and ‘QD on nanowire’ nanostructure was formed as a practical plasmonic device using DEP force.
Nowadays, applications of surface plasmon (SP) were highlighted for facilitating the all integrated optical circuit in nano
space. We introduce the design and fabrication of a periodic array of gold nanostructure for detection of light which is
propagated in a SiON waveguide. The gold nanostructures are designed using Finite Element Method (FEM) and
fabricated by electron beam lithography and lift-off processes. The array is composed of 5 nano rods. The nanorod has
50 nm height, 100 nm width and 15 um length. The enhancement of light at nano array was detected. Below the specific
distance between nano array and waveguide, the nano array can detect the evanescent tail of light. The results
demonstrate nanorods array can verify the fact that the incident light propagates in a waveguide or not when optical
components are densely integrated.
We introduce a fabrication process to immobilize cadmium selenide (CdSe) Quantum Dots (QDs) on end-facets
of metal nanowires, which can be possibly used as a cavity-free unidirectional single photon source with
high coupling efficiency due to high Purcell factor. Nanowires were fabricated using E-beam lithography, E-beam
evaporation, and lift-off process and finally covered with chemically deposited silicon dioxide (SiO2)
layer. End-facets of metal nanowires were defined using wet etching process. QD immobilization was
accomplished through surface modifications on both metal and QD surfaces. We immobilized thiol (-SH)
functionalized 15 base pair (bp) ssDNA on Au nanowire surface to hybridize with its complimentary amine (-
NH3) functionalized 15bp ssDNA and conjugated the amine functionalized 15bp ssDNA with QD. Presenting
QD immobilization method showed high selectivity between metal nanowire and SiO2 surfaces.
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