R.F. Plasma CVD Of Diamond From Oxygen Containing Gases

D. E. Meyer; T. B. Kustka; R. O. Dillon; J. A. Woollam

doi:10.1117/12.962058

15 January 1989 R.F. Plasma CVD Of Diamond From Oxygen Containing Gases

D. E. Meyer, T. B. Kustka, R. O. Dillon, J. A. Woollam

Proceedings Volume 1146, Diamond Optics II; (1989) https://doi.org/10.1117/12.962058
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

A 13.56 MHz inductively coupled plasma system has been used to deposit diamond from CH₄/O₂ in H₂, CO in H2' and CH₄/CO₂ in H₂ plasmas. Depositions were made on substrates of silicon and quartz with surfaces modified by scratching, or coated with Diamond-Like Carbon (DLC), or left unmodified. The C atom to 0 atom ratio was systematically varied as well as the total concentration. Polycrystalline films, faceted particles and spherical particles were deposited. We found that a C:0 ratio of 1:1 with a total concentration between 2% and 3% in hydrogen resulted in large area polycrystalline films for the deposition parameters investigated.

Citation Download Citation

D. E. Meyer, T. B. Kustka, R. O. Dillon, and J. A. Woollam "R.F. Plasma CVD Of Diamond From Oxygen Containing Gases", Proc. SPIE 1146, Diamond Optics II, (15 January 1989); https://doi.org/10.1117/12.962058

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