Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field

Esmat Farzana; Fikadu Alema; Wan Ying Ho; Akhil Mauze; Takeki Itoh; Andrei Osinsky; James S. Speck

doi:10.1117/12.2591768

5 March 2021 Vertical β-Ga₂O₃ Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field

Esmat Farzana, Fikadu Alema, Wan Ying Ho, Akhil Mauze, Takeki Itoh, Andrei Osinsky, James S. Speck

Author Affiliations +

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870G (2021) https://doi.org/10.1117/12.2591768
Event: SPIE OPTO, 2021, Online Only

Abstract

Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD) epitaxy are reported for high-power devices. The field plate Schottky barrier diode (SBD) showed a differential specific on-resistance (Ron,sp) of 0.67 mΩ-cm2 and an average breakdown electric field of 2.28 MV/cm. To the best of our knowledge, this Ron,sp is the lowest among the available vertical β-Ga2O3 SBD reports, and contributed from the high-mobility MOCVD β-Ga2O3 epitaxy. Moreover, the average electric field of 2.28 MV/cm is higher compared to most of the vertical β-Ga2O3 punch-through SBDs. These results suggest that the high-quality MOCVD β-Ga2O3 can be promising for high-power devices.

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Esmat Farzana, Fikadu Alema, Wan Ying Ho, Akhil Mauze, Takeki Itoh, Andrei Osinsky, and James S. Speck "Vertical β-Ga₂O₃ Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870G (5 March 2021); https://doi.org/10.1117/12.2591768

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