Growth of High TcYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition

P. S. Kirlin; R. Binder; R. Gardiner; D. W. Brown

doi:10.1117/12.965154

19 March 1990 Growth of High T_cYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition

P. S. Kirlin, R. Binder, R. Gardiner, D. W. Brown

Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965154
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Thin films of YBa2Cu3O7-x were grown on MgO(100) by metalorganic chemical vapor deposition (MOCVD). Low pressure growth studies were carried out between 400 and 600°C using metal β-diketonate complexes as source reagents for Y, Ba, and Cu. As-deposited films were amorphous and a two stage annealing protocol was used in which fluorine was first removed in a Ar/H20 stream between 700 and 850°C, followed by calcination in flowing oxygen between 500 and 950°C. Scanning electron microscopy, X-ray diffraction and energy dispersive analysis indicate that good compositional and dimensional uniformity could be achieved. The temperature of the oxygen annealing step was shown to have a dramatic impact on the physical and electrical properties of the YBa2Cu307-x thin films. Annealing temperatures exceeding 910°C gave large crystallites and semiconducting resistivity above Tc; annealing temperatures below 910°C yielded films with metallic conductivity whose density and superconducting transition varied inversely with maximum annealing temperature. Optimized deposition/annealing protocols yielded films with a preferred c-axis orientation, R273/R100 ratios of 2, onsets as high as 94K and zero resistance exceeding 90K.

Citation Download Citation

P. S. Kirlin, R. Binder, R. Gardiner, and D. W. Brown "Growth of High T_cYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965154

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