Plasma Treatment of High Tc Thin Films for Monolithic Superconducting Devices

K. Gotoh; A. Yoshida; H. Tamura; S. Morohashi; N. Fujimaki; S. Hasuo

doi:10.1117/12.965167

19 March 1990 Plasma Treatment of High Tc Thin Films for Monolithic Superconducting Devices

K. Gotoh, A. Yoshida, H. Tamura, S. Morohashi, N. Fujimaki, S. Hasuo

Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965167
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

We studied plasma treatment for application to high Tc superconducting devices. The electrical and physical properties of high Tc thin films can be modified by Ar plasma treatment. The Ar plasma irradiated films showed super-normal transition. We confirmed by X-ray photoelectron spectroscopy that Ar plasma treatment changed Cu valence of high Tc films significantly. We tried to fabricate super-normal-super (S-N-S) structures from high Tc thin films using selective Ar plasma treatment.

Citation Download Citation

K. Gotoh, A. Yoshida, H. Tamura, S. Morohashi, N. Fujimaki, and S. Hasuo "Plasma Treatment of High Tc Thin Films for Monolithic Superconducting Devices", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965167

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