Plasma luminescence spectroscopy for sputtering growth of high Tc superconductors

Sang Seop Yom; Yohee Kim; Sang Sam Choi

doi:10.1117/12.20828

1 October 1990 Plasma luminescence spectroscopy for sputtering growth of high Tc superconductors

Sang Seop Yom, Yohee Kim, Sang Sam Choi

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20828
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We present in situ. real-time monitoring of emission lines from rf induced plasma of elemental and ionized species from target of YBaCuO7_ compounds during the sputtering growth. Abundances of the ionized and/or neutral species rather than clusters were observed while relative composition of the species was varied by target composition, applied rf power, gas pressure, and location of substrate. We discuss usefulness of real time monitoring of ejected species which depend on rf power and gas pressure during the sputtering deposition of high Tc superconducting thin films.

Citation Download Citation

Sang Seop Yom, Yohee Kim, and Sang Sam Choi "Plasma luminescence spectroscopy for sputtering growth of high Tc superconductors", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20828

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