Presentation + Paper
12 September 2021 Usage of dry processes for the formation of diffractive structures on Ti and Ti/Si films
Viktor P. Korolkov, Roman I. Kuts, Anatoly I. Malyshev, Dmitry A. Belousov, Aleksey E. Matochkin
Author Affiliations +
Abstract
The paper describes methods for manufacturing of diffractive optical elements by means of only "dry" processes starting from direct laser writing on titanium-containing films. According to first approach, direct laser writing onto thin Ti film forms surface oxide mask. Reactive ion etching removes non-oxidized Ti film and develops "latent" oxidized image. Subsequent thermal annealing of the oxidized Ti structure in air makes the mask more stable for following reactive ion etching of fused silica substrate to ensure proper phase depth of the binary diffractive structure. This makes it possible to avoid liquid etching, which reduces the yield and accuracy. The phase structure of the diffractive elements manufactured using the described method consists of the grooves etched in the fused silica substrate between ridges covered by TiO2 between them. We found out also that covering the Ti film by very thin Si layer helps to increase laser energy absorption at direct writing and creates quite resistant masking layer TiSi2 for the reactive ion etching. Preliminary estimates show that dual layer Si/Ti films can be used to create amplitude reflective DOEs. Possible application area for the developed methods is manufacturing of the diffractive optical elements used for precision generation of reference wavefronts in interferometric measurements of spherical and aspherical surfaces.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Viktor P. Korolkov, Roman I. Kuts, Anatoly I. Malyshev, Dmitry A. Belousov, and Aleksey E. Matochkin "Usage of dry processes for the formation of diffractive structures on Ti and Ti/Si films", Proc. SPIE 11873, Optical Fabrication, Testing, and Metrology VII, 1187307 (12 September 2021); https://doi.org/10.1117/12.2597162
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KEYWORDS
Titanium

Silicon

Oxidation

Reactive ion etching

Etching

Silicon films

Oxides

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