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5 March 2022 First-principles studies of diffusion in gallium oxide
Mengen Wang, Sai Mu, Chris Van de Walle
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Proceedings Volume 12002, Oxide-based Materials and Devices XIII; 120020B (2022) https://doi.org/10.1117/12.2618021
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
We have used first-principles calculations, based on advanced hybrid density functional theory, to accurately model diffusion of point defects and impurities in Ga2O3. Control of doping is crucial for devices: it should be possible to control the carrier concentrations all the way from semi-insulating to highly conductive n-type material. I will discuss impurities used for donor doping, deep acceptors, as well as unintentional contaminants such as carbon and hydrogen. The results provide important guidance for incorporating Ga2O3 into devices.
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Mengen Wang, Sai Mu, and Chris Van de Walle "First-principles studies of diffusion in gallium oxide", Proc. SPIE 12002, Oxide-based Materials and Devices XIII, 120020B (5 March 2022); https://doi.org/10.1117/12.2618021
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KEYWORDS
Diffusion
Magnesium
Hydrogen
Oxides
Electronics
Metalorganic chemical vapor deposition
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