Presentation + Paper
13 March 2024 Q-factor improvement of surface ion trap fabrication
H. Y. Li, Morteza Ahmadi, Huihong Clarence Liu, Norhanani Jaafar, Mishra Dileep, Simon Chun Kiat Goh, YanYan Zhou, Manas Mukherjee
Author Affiliations +
Abstract
Quality factor (Q-factor) is important parameter for surface ion trap. To improve the Q-factor, isolation dielectric thickness was increased from 2μm to 3μm, Si trench concept was applied in this study. To reduce Si substrate RF loss, glass substrate was used for surface ion trap metal plates fabrication. We report the results obtained from determining the Q-factor of the fabricated devices at room temperature and cryogenic temperatures.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
H. Y. Li, Morteza Ahmadi, Huihong Clarence Liu, Norhanani Jaafar, Mishra Dileep, Simon Chun Kiat Goh, YanYan Zhou, and Manas Mukherjee "Q-factor improvement of surface ion trap fabrication", Proc. SPIE 12911, Quantum Computing, Communication, and Simulation IV, 1291108 (13 March 2024); https://doi.org/10.1117/12.3000303
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KEYWORDS
Silicon

Ions

Glasses

Fabrication

Electrodes

Metals

Cryogenics

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