Enhanced etching of InP by cycling with sputter etching and reactive ion etching

Alexandros T. Demos; H. S. Fogler; Stella W. Pang; Michael E. Elta

doi:10.1117/12.48924

1 March 1991 Enhanced etching of InP by cycling with sputter etching and reactive ion etching

Alexandros T. Demos, H. S. Fogler, Stella W. Pang, Michael E. Elta

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48924
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

A new etch technique which oscillates between sputter etching and RIE modes of etching was investigated. Extensive studies for InP using BCl/Ar and Cl/BCl/Ar gas systems were performed with standard RIE equipment. The etching sequence was performed with a programmable controller which automates the cycling sequence. The time period and sputter duty cycle or percent sputter time are two important factors that were studied in these experiments. Using this cyclic technique an etch rate of 300 A/mm was obtained which is an order of magnitude higher than our standard RIE etch rate for InP. Standard optical photoresists can be used as masks for this technique although metal masks are more feasible. The resulting wall shape is vertical with smooth morphology. Etch enhancements may be explained by the removal of an indium chloride layer. Surface analysis was performed to verify that chlorine is forming on the surface.

Citation Download Citation

Alexandros T. Demos, H. S. Fogler, Stella W. Pang, and Michael E. Elta "Enhanced etching of InP by cycling with sputter etching and reactive ion etching", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48924

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