Optical switching due to band-gap renormalization in MQW GaAs/AlxGa1-xAs at high excitation levels

A. I. Bobrysheva; I. I. Dobinda; S. A. Moskalenko; V. I. Pavlenko; P. I. Perov; I. M. Razdobreev; S. S. Russu; Yu. G. Shekun

doi:10.1117/12.147895

28 June 1993 Optical switching due to band-gap renormalization in MQW GaAs/Al_xGa_1-xAs at high excitation levels

A. I. Bobrysheva, I. I. Dobinda, S. A. Moskalenko, V. I. Pavlenko, P. I. Perov, I. M. Razdobreev, S. S. Russu, Yu. G. Shekun

Author Affiliations +

Proceedings Volume 1807, Photonic Switching; (1993) https://doi.org/10.1117/12.147895
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus

Abstract

The e-h plasma stimulated luminescence line A₁ red-shifted (25 meV) due to band-gap renormalization is detected. The A₁ emission lasts 100 ps. This peculiarity evidenced that a switching time of 100 ps can be achieved.

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A. I. Bobrysheva, I. I. Dobinda, S. A. Moskalenko, V. I. Pavlenko, P. I. Perov, I. M. Razdobreev, S. S. Russu, and Yu. G. Shekun "Optical switching due to band-gap renormalization in MQW GaAs/Al_xGa_1-xAs at high excitation levels", Proc. SPIE 1807, Photonic Switching, (28 June 1993); https://doi.org/10.1117/12.147895

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