Real-time determination of interconnect metrology

Shadi Alex AbuGhazaleh; Phillip Christie

doi:10.1117/12.250836

12 September 1996 Real-time determination of interconnect metrology

Shadi Alex AbuGhazaleh, Phillip Christie

Proceedings Volume 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II; (1996) https://doi.org/10.1117/12.250836
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

Poor control of wire geometry can result in unacceptable variations in signal propagation velocity and cross-talk. A novel laser diffraction technique for the real-time determination of global interconnect metrology is presented and tested on several different types of chips. Analysis of the diffraction patterns produced by He-Cd (lambda equals 442 nm) and He-Ne (lambda equals 633 nm) laser irradiation of the interconnect structure is shown to reveal global information on variations in wiring parameters. The diffraction intensity profile for a commercial microprocessor fabricated using 2 micrometer design rules is used to test the validity of the approach. Standard diffraction theory reveals that the process variation in wire pitch is of the order of 9%, a value confirmed by examination under a phase contrast microscope. In addition to wire pitch variations the diffraction technique is also used for the measurement of the characteristic fractal dimension of the wiring. Initial results indicate that these measurements may provide an extremely rapid method of assessing important wiring figures of merit, such as the on- chip Rent exponent.

Citation Download Citation

Shadi Alex AbuGhazaleh and Phillip Christie "Real-time determination of interconnect metrology", Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); https://doi.org/10.1117/12.250836

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