Preparation and physical properties of MoO3 thin films

Muhammad Yahaya; M. M. Salleh; Ibrahim A. Talib; Norkamisah Mohd Nor

doi:10.1117/12.300703

20 February 1998 Preparation and physical properties of MoO3 thin films

Muhammad Yahaya, M. M. Salleh, Ibrahim A. Talib, Norkamisah Mohd Nor

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300703
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

Thin films of MoO₃ were prepared by electron beam evaporation technique. The films were deposited onto glass substrates maintained at temperatures in the range 100 - 250 degrees Celsius. The films were characterized by studying their structure, electrical and optical properties. The films formed at 100 degrees Celsius are amorphous with conductivity of about 2.5 X 10^-5 (Omega) ^-1 cm^-1. The effect of deposition temperature on the properties of the films were studied and discussed.

Citation Download Citation

Muhammad Yahaya, M. M. Salleh, Ibrahim A. Talib, and Norkamisah Mohd Nor "Preparation and physical properties of MoO3 thin films", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300703

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available