Fluorescent properties of Tb-doped borosilicate glass films prepared by a sol-gel method

Kazuhiko Tonooka; Katsuyoshi Shimokawa; Okio Nishimura

doi:10.1117/12.424776

27 April 2001 Fluorescent properties of Tb-doped borosilicate glass films prepared by a sol-gel method

Kazuhiko Tonooka, Katsuyoshi Shimokawa, Okio Nishimura

Proceedings Volume 4282, Rare-Earth-Doped Materials and Devices V; (2001) https://doi.org/10.1117/12.424776
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Rare earth elements have been used as optical dopants in glasses for many years. Boro-silicate glass films doped with rare-earths were deposited on glass substrates by using a simple sol-gel method. To avoid the undesirable precipitation due to the different hydrolysis rates between silicon and boron alkoxides, two solutions were used for dip-coating separately. One solution consisted of silicon tetraethoxide, ethanol, water and terbium nitrate as the Tb dopant. Another consisted of triethyl borate. Layer-by-layer deposition was applied by dipping into solutions containing metal alkoxides in sequence. The fluorescence properties of Tb³⁺ were investigated for the boro-silicate samples in relation to the firing effect. As-deposited silicate and boro-silicate samples showed similar fluorescence spectra under UV excitation. After firings at about 800 degrees C, a remarkable increase of the Tb³⁺-ion fluorescence was observed for the boro-silicate samples, while the silicate sample showed a little increase in fluorescence intensity. These experimental results suggested the formation of boro- silicate network and the incorporation of Tb³⁺ into the boro-silicate matrix. The multilayer process was found useful to fabricate multi-component sol-gel films.

Citation Download Citation

Kazuhiko Tonooka, Katsuyoshi Shimokawa, and Okio Nishimura "Fluorescent properties of Tb-doped borosilicate glass films prepared by a sol-gel method", Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); https://doi.org/10.1117/12.424776

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