Large electric-field-induced electron drift velocity observed in InxGal-xAs-based p-i-n semiconductor nanostructures

W. Liang; Kong-Thon F. Tsen; Meng-Chyi Wu; Chong-Long Ho; Wen-Jeng Ho

doi:10.1117/12.479506

30 May 2003 Large electric-filed induced electron drift velocity observed in In_xGa_l-xAs-based p-i-n semiconductor nanostructures

W. Liang, Kong-Thon F. Tsen, Meng-Chyi Wu, Chong-Long Ho, Wen-Jeng Ho

Author Affiliations +

Proceedings Volume 4992, Ultrafast Phenomena in Semiconductors VII; (2003) https://doi.org/10.1117/12.479506
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Transient subpicosecond Raman spectroscopy has been used to interrogate electron transport properties in In_xGa_1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be much larger than either GaAs or InP-based p-i-n nanostructures at comparable field. We attribute this to both the much smaller electron effective mass and the much larger Γ to X (L) energy separations in InxGa_1-xxAs-based semiconductor nanostructures.

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W. Liang, Kong-Thon F. Tsen, Meng-Chyi Wu, Chong-Long Ho, and Wen-Jeng Ho "Large electric-filed induced electron drift velocity observed in In_xGa_l-xAs-based p-i-n semiconductor nanostructures", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); https://doi.org/10.1117/12.479506

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