Paper
24 January 2013 Real-time measurement of electrical and optical transients of as-deposited amorphous AgInSbTe thin films during crystallization induced by single-shot picosecond laser pulses
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Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820M (2013) https://doi.org/10.1117/12.2014860
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China
Abstract
The crystallization properties of as-deposited amorphous AgInSbTe thin films irradiated by single-shot picosecond laser pulses were studied using in-situ transient optical reflectance and electrical resistance measurements with nanosecond resolution. It was found that the real-time optical and electrical signal responses were different under the same pumping conditions. The optical signals showed a multistage crystallization process with a total time of approximately 150 ns, while the electrical signals showed a negative exponential trend decreasing to the final stable state within about several microseconds. A resistor–capacitor model was constructed to explain this delayed electrical response. The fluencedependent evolution dynamics maybe implied a non-fully crystallization process under ultra-short pulse stimulation.
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G. F. Liang, S. M. Li, H. Huang, F. X. Zhai, Y. Wang, T. S. Lai, and Y. Q. Wu "Real-time measurement of electrical and optical transients of as-deposited amorphous AgInSbTe thin films during crystallization induced by single-shot picosecond laser pulses", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820M (24 January 2013); https://doi.org/10.1117/12.2014860
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KEYWORDS
Crystals

Reflectivity

Silver indium antimony tellurium

Picosecond phenomena

Laser crystals

Resistance

Thin films

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