N-doped Sn15Sb85 thin films for high speed and high thermal stability phase change memory application

Li Yuan; Yifeng Hu; Xiaoqin Zhu; Jianhao Zhang; Hua Zou; Jianzhong Xue; Long Zheng; Weihua Wu; Sannian Song; Zhitang Song

doi:10.1117/12.2246985

12 October 2016 N-doped Sn₁₅Sb₈₅ thin films for high speed and high thermal stability phase change memory application

Li Yuan, Yifeng Hu, Xiaoqin Zhu, Jianhao Zhang, Hua Zou, Jianzhong Xue, Long Zheng, Weihua Wu, Sannian Song, Zhitang Song

Author Affiliations +

Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180V (2016) https://doi.org/10.1117/12.2246985
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China

Abstract

The Sn₁₅Sb₈₅ alloy is characterized by its rapid phase transition. However, its poor thermal stability hinders its application as phase change memory material. After nitrogen doping, the crystallization temperature and 10-year data retention temperature of Sn₁₅Sb₈₅ thin films even reach 235‡C and 173°C, respectively. Both the crystallization activation energy and the amorphous resistance of the thin films increase as well. As a result, the material thermal stability is significant improved. The surface roughness of the films is evaluated by atomic force microscope (AFM). The phase change speed of the thin films, measured by the picosecond laser technique, remains fast.

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Li Yuan, Yifeng Hu, Xiaoqin Zhu, Jianhao Zhang, Hua Zou, Jianzhong Xue, Long Zheng, Weihua Wu, Sannian Song, and Zhitang Song "N-doped Sn₁₅Sb₈₅ thin films for high speed and high thermal stability phase change memory application", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180V (12 October 2016); https://doi.org/10.1117/12.2246985

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