High-yield fabrication technique for mechanically stable suspended-graphene FETs

Hyunsuk Shin; Sungbae J. Lee

doi:10.1117/12.2677202

5 October 2023 High-yield fabrication technique for mechanically stable suspended-graphene FETs

Hyunsuk Shin, Sungbae J. Lee

Proceedings Volume PC12653, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XX; PC126530G (2023) https://doi.org/10.1117/12.2677202
Event: SPIE Nanoscience + Engineering, 2023, San Diego, California, United States

Conference Poster

Abstract

A simple fabrication technique for simultaneously making a series of large-scale graphene field-effect transistors on Si-substrate with suspended active channel is proposed. This technique is focused on two aspects: 1) preventing the degradation of electrical properties of graphene active channel by defects and chemical residues between graphene and substrate, and 2) proposing simpler fabrication methods of generating many suspended FET devices on a large-scale substrate. To maintain structural integrity of fabricated devices while minimize electrical degradation, we employed a sandwich method, realizing 76% fabrication yield that is higher than other proposed methods of fabricating suspended active channel style FET devices. As our method has a mechanically stable structure, it can be imposed to make electrical devices with various two–dimensional (2D) materials. Our method can also be applied to the engineering of future devices in various applications because a large amount of electrically clean samples can be manufactured at once.

Citation Download Citation

Hyunsuk Shin and Sungbae J. Lee "High-yield fabrication technique for mechanically stable suspended-graphene FETs", Proc. SPIE PC12653, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XX, PC126530G (5 October 2023); https://doi.org/10.1117/12.2677202

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