We demonstrate in this paper some applications of a general approach for constructing field-effect transistor compact models based on decomposing of FET modeling into two independent parts: device electrostatics and continuity equation. While the latter part has a universal form for any field-effect devices, the electrostatics is specific for different types of transistors which is expressed in different dependencies of the channel charge density upon gate voltage. We discuss here two applications of this approach using the examples of Schottky barrier MESFETs and organic field-effect transistors.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.