Dr. Neeraj Nepal Profile

Dr. Neeraj Nepal

at US Naval Research Lab

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Author

Publications (6)

Proceedings Article | 12 April 2021 Presentation

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Marko Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, Charles Eddy

Proceedings Volume 11742, 117420W (2021) https://doi.org/10.1117/12.2588499

KEYWORDS: Metalorganic chemical vapor deposition, Field effect transistors, Transistors, Silicon carbide, Scattering, Temperature metrology, Silicon, Semiconductors, Roads, Resistance

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Proceedings Article | 6 March 2021 Presentation

Band alignment of ScxAl1-xN/GaN heterojunctions

Eric Jin, Matthew Hardy, Alyssa Mock, John Lyons, Alan Kramer, Marko Tadjer, Neeraj Nepal, D. Scott Katzer, David Meyer

Proceedings Volume 11686, 1168622 (2021) https://doi.org/10.1117/12.2579042

KEYWORDS: Heterojunctions, Gallium nitride, X-rays, Photoemission spectroscopy, Molecular beam epitaxy, Ellipsometry

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Proceedings Article | 5 March 2021 Presentation

High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications

Proceedings Volume 11687, 116870S (2021) https://doi.org/10.1117/12.2588944

KEYWORDS: Metalorganic chemical vapor deposition, Field effect transistors, Electronics, Transistors, Silicon carbide, Scattering, Atmospheric plasma, Silicon, Semiconductors, Roads

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Proceedings Article | 13 February 2016 Paper

Atomic layer epitaxy for quantum well nitride-based devices

Jennifer Hite, Neeraj Nepal, Virginia Anderson, Jaime Freitas, Michael Mastro, Charles Eddy

Proceedings Volume 9755, 97551W (2016) https://doi.org/10.1117/12.2209111

KEYWORDS: Quantum wells, Gallium nitride, Epitaxy, Plasma, Crystals, Interfaces, Chemical species, Atomic layer deposition, Thin films, Binary data

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Proceedings Article | 15 February 2006 Paper

Time-resolved photoluminescence studies of Mg-doped AlN epilayers

N. Nepal, M. Nakarmi, J. Y. Lin, H. X. Jiang

Proceedings Volume 6118, 61180E (2006) https://doi.org/10.1117/12.651856

KEYWORDS: Aluminum nitride, Magnesium, Excitons, Picosecond phenomena, Gallium nitride, Aluminum, Gallium, Electromagnetic coupling, Luminescence, Metalorganic chemical vapor deposition

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Proceedings Article | 13 April 2005 Paper

Carrier dynamics in AlN and GaN epilayers at the elevated temperatures

Neeraj Nepal, Ki-Bum Nam, Jing Li, Jing Lin, Hongxing Jiang

Proceedings Volume 5725, (2005) https://doi.org/10.1117/12.590917

KEYWORDS: Aluminum nitride, Gallium nitride, Carrier dynamics, Temperature metrology, Phonons, Ultrafast phenomena, Semiconductor materials, Semiconductors, Nanostructure materials, Deep ultraviolet

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Showing 5 of 6 publications

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